Comparison of Zn and Mg incorporation in MOVPE InP/GaInAsP laser structures

Donor-acceptor interactions in Al0.5In0.5P

“…[4][5][6][7][8][9][10][11][12][13] The observation of enhanced Mg incorporation in the presence of the deep-donor oxygen thus suggests that oxygen may also influence Mg diffusion in these samples. In fact, further inspection of the SIMS data in Fig.…”

“…With regard to such properties, we have previously demonstrated that the deep donor, oxygen, enhances Mg incorporation in Al 0.5 In 0.5 P. 3 Similar to our previous observations regarding Mg-oxygen interactions in Al 0.5 In 0.5 P, various other research groups have reported that shallow-donor species, such as S or Si, have enhanced acceptor incorporation in III-V semiconductors. [4][5][6][7][8][9][10][11][12][13] In addition to enhancing acceptor incorporation, such shallow-donor species have also been shown to suppress acceptor diffusion in III-V semiconductors, [4][5][6][7][8][9][10][11][12][13] thus providing motivation to investigate the potential impact of the deep donor, oxygen, on Mg diffusion in Al 0.5 In 0.5 P. In addition to this investigation of Mg-oxygen dopant interactions in Al 0.5 In 0.5 P, we also consider donor-acceptor interactions between Mg and the shallow donors, Te, S, and Si, to allow the reader to more effectively compare our results on Mg-oxygen dopant interactions to previous reports on dopant interactions between shallow donors and Zn or Mg acceptors. To the best of our knowledge, this paper offers the first detailed study of donor-acceptor interactions in Al 0.5 In 0.5 P, and it is also the first report we are aware of that compares the effect of deep-donor species to those of shallow-donor species on acceptor incorporation and diffusion in III-V semiconductors.…”

Diffusion of Zn across p-n junctions in Ga0.47In0.53As

“…" " U I J L DCYCLPL CUClGillL U-Lypr uupura W l U ' IUW UUlUDlUU coefficients are available for growth by organometallic vapour-phase epitaxy (OMVPE), the choice of p-type dopant presents more of a problem. Zn, which is incorporated using precursors of dimethyl or diethyl zinc (DEZn), is generally preferred to Mg, Cd or Be for reasons of dopant control, incorporation efficiency or toxicity respectively [1,2]. Although C has been found to achieve high levels of incorporation with low diffusivity in GaAs [3], few studies of C doping in GaInAs by a reaction between the C and In precursors which complicates the control of the alloy composition.…”