A kinetic model for metalorganic chemical vapor deposition from trimethylgallium and arsine

Abstract

A kinetic model based on the collision theory of chemical reactions is proposed for gallium arsenide (GaAs) metalorganic chemical vapor deposition from trimethylgallium and arsine. A simplified reaction mechanism is incorporated into the model, which includes four heterogeneous deposition reactions: Ga-containing and As-containing species with Ga and As sites, as well as carbon incorporation reactions. An equation for the overall growth rate of the four deposition reactions is derived, which is simplified under the Ga-rich or As-rich growth condition. A discussion about antisite defects leads to the conclusion that As-rich growth produces stoichiometric GaAs. The relation between temperature and arsine/trimethylgallium ratio for As-rich growth is defined. The concept of competitive adsorption is introduced to understand doping and ternary deposition. Carrier concentration for n-type, p-type, and amphoteric doping as a function of deposition conditions is derived. Conversion from p type to n type with arsine/trimethylgallium ratio due to residual carbon is, for the first time, quantitatively explained within the framework of doping. Film composition as a function of deposition conditions in ternary deposition of aluminum–gallium arsenide (Al1−xGaxAs) and gallium arsenide–phosphide (GaAs1−yPy) is also derived. The distributions of Al and P between gas phase and solid film follow the same physics rule but differ in the nature of impinging species. The quantitative agreement between the model and a wide range of experiments demonstrates the value of this model.

Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

“…At this temperature region, the activation energy is estimated to be as low as 5 kcal mol −1 (0.22 eV), indicating the near mass transport limited region. 27 With a further increase of growth temperature, the growth rate decreases, which is mainly attributed to the surface desorption or the gas phase reaction. 28 The VI/III ratio dependent growth rate is also shown in Fig.…”

Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate

“…The decrease of k s also suggests the surface reaction of As-atoms with As-sites. There are four elementary heterogeneous reactions on GaAs surface [15]: Ga-species reaction on Ga-sites; Ga-species on As-sites; As-species reaction on Ga-sites; and As-species on As-sites, among which the deposition of As-species on As-sites is a selflimited process with a small sticking coefficient or high E a . However, it is also reported that reactions between group V species and group V sites do occur.…”

The Physics of Semiconductors

“…Lines are guides to the eye. Experimental data from [199] Deviation from the ideal stoichiometry introduces point defects that can be electrically active and change conductivity type and carrier concentration. In the case of CuInSe 2 , excess Cu could go on interstitial positions or promote selenium vacancies, both leading to n-type behavior.…”