Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

Chen, Shujian; Chen, Zimin; Chen, Weiqu; Fei, Zeyuan; Luo, Tiecheng; Liang, Jun; Wang, Xinzhong; Wang, Gang; Pei, Yanli

doi:10.1039/d3ce00078h

Cited by 4 publications

(3 citation statements)

References 37 publications

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“…Additionally, peaks at 37.34°, 38.38°, and 58.94° are associated with the β-Ga2O3 reflections, specifically ( 311), ( 4 02), and ( 6 03), respectively. It is noteworthy that the highest intensity peak aligns with the sapphire (006) plane [22,23]. It is observed that AG and N-640 are nearly pure ε phase without obvious phase transition.…”

Section: Resultsmentioning

confidence: 90%

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High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

Fei,

Chen,

Chen

et al. 2023

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High-temperature annealing has been regarded as an effective technology to improve the performance of Ga2O3-based solar-blind photodetectors (SBPDs). However, as a metastable phase, ε-Ga2O3 thin film may undergo phase transformation during post-annealing. Therefore, it is necessary to investigate the effect of the phase transition and the defect formation or desorption on the performance of photodetectors during post-annealing. In this work, the ε-Ga2O3 thin films were grown on c-plane sapphire with a two-step method, carried out in a metal-organic chemical vapor deposition (MOCVD) system, and the ε-Ga2O3 metal-semiconductor-metal (MSM)-type SBPDs were fabricated. The effects of post-annealing on ε-Ga2O3 MSM SBPDs were investigated. As a metastable phase, ε-Ga2O3 thin film undergoes phase transition when the annealing temperature is higher than 700 °C. As result, the decreased crystal quality makes an SBPD with high dark current and long response time. In contrast, low-temperature annealing at 640 °C, which is the same as the growth temperature, reduces the oxygen-related defects, as confirmed by X-ray photoelectron spectroscopy (XPS) measurement, while the good crystal quality is maintained. The performance of the SBPD with the post-annealing temperature of 640 °C is overall improved greatly compared with the ones fabricated on the other films. It shows the low dark current of 0.069 pA at 10 V, a rejection ratio (Rpeak/R400) of 2.4 × 104 (Rpeak = 230 nm), a higher photo-to-dark current ratio (PDCR) of 3 × 105, and a better time-dependent photoresponse. These results indicate that, while maintaining no phase transition, post-annealing is an effective method to eliminate point defects such as oxygen vacancies in ε-Ga2O3 thin films and improve the performance of SBPDs.

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Section: Resultsmentioning

confidence: 90%

“…402), and (603), respectively. It is noteworthy that the highest intensity peak aligns with the sapphire (006) plane [22,23]. It is observed that AG and N-640 are nearly pure ε phase without obvious phase transition.…”

Section: Methodsmentioning

confidence: 90%

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

Fei,

Chen,

Chen

et al. 2023

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“…Its unit cell contains 16 Ga cations and 24 O atoms, as shown in Figure (a). The lattice parameters calculated using the HSE06 hybrid functional ( a = 5.02 Å, b = 8.69 Å, and c = 9.26 Å) are in excellent agreement with the experimental results. − The electronic structures are calculated using the PBE functional method, which generates a similar trend in the band structure as that of the HSE06 hybrid functional except for the different band gap values. They are approximately 1.97 and 4.62 eV (Figure (b),(c)), respectively.…”

Section: Resultsmentioning

confidence: 99%

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

Feng,

Chen,

Liang

et al. 2024

J. Phys. Chem. C

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Dilute magnetic semiconductors (DMSs) have attracted widespread interest due to their potential applications in data storage and spintronics. However, there is no relevant report on the ferromagnetism of κ-Ga 2 O 3 , which is crucial for the spintronics research of the wide-gap semiconductor Ga 2 O 3 . In this report, the ferromagnetism of κ-Ga 2 O 3 with N doping was investigated based on density functional theory. N as a deep acceptor exhibits low defect formation energy in κ-Ga 2 O 3 . The p−p state interaction between N and O atoms results in the ferromagnetic coupling, which is responsible for the transformation of κ-Ga 2 O 3 from nonmagnetic to ferromagnetic. A single N atom with spin-polarized 2p states in the band gap generates a total magnetic moment of 1.0 μ B . The N−N pair interaction length extends up to 4.6 Å. Interestingly, additional hole carriers can enhance the p−p ferromagnetic coupling, which shows a half-metallic ferromagnetic ground state. The stability of the magnetism at room temperature was confirmed via ab initio molecular dynamics simulations. The Curie temperature exceeds room temperature and rises with increasing hole carrier density. This study will provide an important foundation for the application of Ga 2 O 3 in the spintronics field.

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Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

Chen,

Chen

et al. 2024

Journal of Alloys and Compounds

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Metal–organic chemical vapor deposition of ε-Ga₂O₃ thin film using N₂O as a precursor

Abstract: As a novel wide bandgap semiconductor, ε phase Ga2O3 is characterized by an extremely high polarization coefficient and could be applied in different kinds of piezoelectric or electronic devices. However,...

Cited by 4 publications

References 37 publications

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism

Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

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Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

Abstract: As a novel wide bandgap semiconductor, ε phase Ga2O3 is characterized by an extremely high polarization coefficient and could be applied in different kinds of piezoelectric or electronic devices. However,...

Cited by 4 publications

References 37 publications

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

High-Performance ε-Ga2O3 Solar-Blind Photodetectors Grown by MOCVD with Post-Thermal Annealing

First-Principles Prediction of κ-Ga2O3:N Ferromagnetism

Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

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Metal–organic chemical vapor deposition of ε-Ga₂O₃ thin film using N₂O as a precursor

First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism