Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates

High-quality heteroepitaxy of ε-Ga2O3 films on 4H-SiC substrates grown via MOCVD

“…The presence of this contrast can be attributed to boundaries between rotational domains, 23,28 and the tilting phenomenon is caused by the lattice tilt in ε-Ga 2 O 3 induced by misoriented substrates. 29 Fig. 6(d) is the enlarged image marked by square D in Fig.…”