Zener tunneling in semiconductors

Kane, E. O.

doi:10.1016/0022-3697(60)90035-4

Cited by 889 publications

(322 citation statements)

References 11 publications

Supporting

Mentioning

311

Contrasting

Unclassified

Order By: Relevance

“…5c. This behavior is characteristic of a tunnel diode [33][34][35][36][37][38][39][40][41] and is consistent with degenerative doping and the introduction of donor states below the conduction band minimum.…”

Section: Phosphorus-doped B 5 C Insupporting

confidence: 70%

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

McIlroy

Hwang

Yang

et al. 1998

Applied Physics A: Materials Science & Processing

View full text Add to dashboard Cite

show abstract

Section: Phosphorus-doped B 5 C Insupporting

confidence: 70%

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

McIlroy

Hwang

Yang

et al. 1998

Applied Physics A: Materials Science & Processing

View full text Add to dashboard Cite

show abstract

“…9 Enhancing the BTBT rate of direct gap Ge 1−x Sn x alloys is important for high-performance TFETs in application. The direct gap BTBT generation rate G can be described by Kane's model in the form 33,34 …”

Section: Resultsmentioning

confidence: 99%

Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys

et al. 2016

View full text Add to dashboard Cite

Direct gap Ge1−xSnx alloys under [100] and [110] uniaxial strain are comprehensively investigated by theoretical calculations using the nonlocal empirical pseudopotential method (EPM). It is shown that [100] uniaxial tensile strain aids indirect-to-direct gap transition in Ge1−xSnx alloys. The Γ electron effective mass along the optimal direction under [110] uniaxial strain is smaller than those under [100] uniaxial strain and (001) biaxial strain. Additionally, the direct tunneling gap is smallest along the strain-perpendicular direction under [110] uniaxial tensile strain, resulting in a maximum direct band-to-band tunneling generation rate. An optimal [110] uniaxial tensile strain is favorable for high-performance direct gap Ge1−xSnx electronic devices.

show abstract

“…Kane derived a familiar equation for Zener's BTBT, [36] which yields the third guideline. The equation for tunneling rate G, which is proportional to I, is expressed as [32,36] …”

Section: Overview Of State-of-the-art Tfet Researchmentioning

confidence: 99%

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

2017

View full text Add to dashboard Cite

The tunnel field-effect transistor (TFET) is one of the candidates replacing conventional metal-oxide-semiconductor field-effect transistors to realize low-power-consumption large-scale integration (LSI). The most significant issue in the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material having a low band-to-band tunneling probability and is not favored for the channel. However, a new technology to enhance tunneling current in Si-TFETs utilizing the isoelectronic trap (IET) technology was recently proposed. IET technology provides a new approach to realize low-power-consumption LSIs with TFETs. The present paper reviews the state-of-the-art research and future prospects of Si-TFETs with IET technology.

show abstract

Zener tunneling in semiconductors

Cited by 889 publications

References 11 publications

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

Contact Info

Product

Resources

About