The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

Abstract

Remmes, N.; Dowben, Peter A.; Ahmad, A.A.; Ianno, N.J.; Li, J.Z.; and Jiang, H.X., "The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films" (1998). Peter Dowben Publications. 105.

The coadsorption and interaction of molecular icosahedra with mercury

“…The iron [18][19][20][21], vanadium [21], chromium [21] and nickel [17,[21][22][23][24] doping of boron carbides is doc umented. All of these latter transition metal dopants dope boron and boron carbides n-type.…”

“…has not yet been put forward for the donor state accumulation that accompanies transition metal doping [22,24]. Models for increasing donor and acceptor state densities are complicated by the obser vation that there are several polytypes of similar composition boron carbides (studies in some detail for the nomi nally C 2 B 10 semiconducting boron car bides [4,25,26]) and both n-type and p-type semiconducting boron carbides are possible without transition metal doping.…”

The all boron carbide diode neutron detector: Comparison with theory

“…Following the procedure described elsewhere [25,26,28,29], the p-n homojunctions were formed by depositing boron carbide thin fi lms in a custom designed parallel plate 13.56 MHz radio frequency PECVD reactor. The source molecule gas closo-1,2-dicarbadecaborane (orthocarborane) was used to grow the slightly p-type boron carbide while nickelocene (Ni(C 5 H 5 ) 2 ) was used to introduce nickel into the semiconducting boron carbide fi lm grown in the plasma reactor using orthocarborane (closo-1,2-dicarboadodecaborane (C 2 B 10 H 12 )) fi lm.…”

“…The source molecule gas closo-1,2-dicarbadecaborane (orthocarborane) was used to grow the slightly p-type boron carbide while nickelocene (Ni(C 5 H 5 ) 2 ) was used to introduce nickel into the semiconducting boron carbide fi lm grown in the plasma reactor using orthocarborane (closo-1,2-dicarboadodecaborane (C 2 B 10 H 12 )) fi lm. The inclusion of nickel, from nickelocene (Ni(C 5 H 5 ) 2 ) simultaneously introduced into the plasma reactor with orthocarborane (closo-1,2-dicarboadodecaborane (C 2 B 10 H 12 )) fi lm, resulted in an effective n-type-boron carbide [25,26,28,29]. All boron carbide p-n junction diodes were also fabricated by chemical vapor deposition from two different isomers of closo-dicarbadodecaborane (closo-1,2-dicarbadodecaborane (orthocarborane, C 2 B 10 H 12 ) and closo-1,7-dicarbadodecaborane (metacarborane, C 2 B 10 H 12 )) that differ only by the carbon position within the icosahedral cage.…”

“…All boron carbide p-n junction diodes were also fabricated by chemical vapor deposition from two different isomers of closo-dicarbadodecaborane (closo-1,2-dicarbadodecaborane (orthocarborane, C 2 B 10 H 12 ) and closo-1,7-dicarbadodecaborane (metacarborane, C 2 B 10 H 12 )) that differ only by the carbon position within the icosahedral cage. The diodes were constructed using the process of PECVD (plasma enhanced chemical vapor deposition) as described for both heterojunction [1,[25][26][27][28][29][30] and homojunction diodes [25,26] of boron carbide, but with only carboranes and argon as the plasma reactor gases. The boron carbide semiconductor fi lms formed after decomposition are clearly self doping materials, since the deposition and decomposition involves only the metacarborane and orthocarborane source molecules (n-type and p-type, respectively), as discussed elsewhere [4].…”