We have successfully nickel doped a boron carbide ͑B 5 C͒ alloy film. The nickel doped boron-carbide ͑Ni-B 5 C 1ϩ␦) thin films were fabricated from a single source carborane cage molecule and nickelocene ͓Ni͑C 5 H 5) 2 ͔ using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of NiB 5 C 1ϩ␦ on both n-type silicon and p-type B 5 C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures.
We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that ‘‘real-time’’ projection lithography (selective area deposition) of boron-carbide devices is possible.
We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement.
Remmes, N.; Dowben, Peter A.; Ahmad, A.A.; Ianno, N.J.; Li, J.Z.; and Jiang, H.X., "The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films" (1998). Peter Dowben Publications. 105.
We have nickel doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadodecaborane ͑ortho-carborane͒ was used to grow the boron carbide, while nickelocene ͓Ni͑C 5 H 5 ͒ 2 ͔ was used to introduce nickel into the growing film. The doping of nickel transformed a p-type, B 5 C material, relative to lightly doped n-type silicon, to an n-type material. Both n-n heterojunction diodes and n-p heterojunction diodes were constructed, using as substrates n-and p-type Si͑111͒, respectively. With sufficient partial pressures of nickelocene in the plasma reactor, diodes with characteristic tunnel diode behavior can be successfully fabricated.
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