X-ray determination of dislocation density in epitaxial ZnCdTe

Abstract

Widths of double-crystal x-ray rocking curves for epitaxial layers of the ternary alloy ZnCdTe are found to correlate with lattice parameter misfit between layer and substrate. Estimates of dislocation density in the layers are made using these widths. Values thus obtained are found to be in good agreement with values reported for other materials with similar misfit.

Double-crystal X-ray topography of freestanding HVPE grown n-type GaN

“…1. Neglecting the contributions to the width of the rocking curves from finite particle size, the upper limit of the average dislocation density is calculated using the following equation [12][13][14] q ¼ where, b (∼ 5.1855 Å) is the length of the burgers vector, which is taken as equal to c-axis lattice parameter [15]. Thus the upper limit of the dislocation density is estimated to be of the order of ∼ 10 7 lines/cm 2 and is consistent with the topographs.…”

X-ray diffraction characterization of the quality and thermal stability of II-VI semiconductor superlattices

“…This suggests that either the buffer layer peaks are precisely coincident with the central peaks, or the buffer layer peaks are too weak to influence the measured central peak reflections. The latter possibility agrees with earlier characterization studies of Cd^.jjZnjjTe epitaxial layers on GaAs substrates (Qadri & Dinan, 1985;Feldman, Austin, Dayem & Westerwick, 1986). The Scherrer lengths based on the extrapolated central peak breadths are listed in Table VI.7.…”

CdZnTe graded buffer layers for HgCdTe/Si integration

“…Molecular-beam epitaxy (MBE) growth of thin Cd 1ÿ x Zn x Te with 0 x 1 was demonstrated on (001) InSb and (001) GaAs substrates by Qadri 9 and Feldman. 10 X-ray diffraction peak half-widths and surface quality were observed to degrade as Cd content was increased from 0% to 80%.…”