CdTe-ZnTe strained-layer superlattices have been grown for the first time using the molecular beam epitaxy technique. The superlattices have been grown at 285 °C. They have been characterized by electron and x-ray diffraction. The presence of satellite peaks in the x-ray spectra shows that the superlattices are of excellent quality despite the large mismatch between CdTe and ZnTe along the growth axis (Δa/a=6.4%). X-ray oscillation patterns show that the superlattices are three-dimensional crystals.
Thin (∼1000 Å) films of (Fe54Co46)1−xCrx have been prepared by magnetron sputtering on Si/SiO2 substrates. The films were shown to be body-centered-cubic and (110) textured. It was found that the Fe54Co46 films possess a saturation magnetization of 24.5 kG at room temperature. Doping the Fe54Co46 films with Cr in the range of 0–13 at. % increased corrosion resistance, electrical resistivity, and reduced the saturation magnetization as a function of the amount of added Cr. The coercivity of both doped and undoped as-deposited films (80–120 Oe) decreased substantially after a 220 °C magnetic anneal. Electrochemical corrosion testing was done in two chloride salt solutions. Potentiodynamic scans performed on films in a 0.47 M chloride bath solution at pH=2.9 showed a substantial increase in corrosion resistance of the films between 6.6 and 8.2 a/o Cr. Similar scans performed in a 0.01 M chloride solution at pH=5.8 showed good corrosion resistance for all the films.
We describe the preparation and properties of hydrogenated amorphous silicon (a-Si:H) and polycrystalline Si (poly-Si) films deposited by electron cyclotron resonance (ECR) reactive plasma deposition. Hydrogen radicals are generated in a physically remote ECR plasma source and are allowed to interact with silane near the growth surface. By controlling the flux of reactive hydrogen species, polycrystalline and amorphous silicon films were systematically grown. Poly-Si films having large Hall mobilities of 35 cm2/V s were deposited at temperatures as low as 450 °C without subsequent annealing. High-quality a-Si:H films were deposited at temperatures as high as 450 °C. Plasma properties near the growth surface were characterized using both optical emission spectroscopy and Langmuir probe techniques.
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