Why is (111) Silicon a Better Mechanical Material for MEMS?

Kim, Jongpal; Cho, Dong‐il Dan; Muller, R.S.

doi:10.1007/978-3-642-59497-7_157

Cited by 90 publications

(55 citation statements)

References 11 publications

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“…For investigations purposes silicon (111) was used to exclude anisotropy of mechanical parameters [7]. The beams were fabricated by chemical treatment and mechanical cutting.…”

Section: Methodsmentioning

confidence: 99%

Influence of hydrogen absorption on stress changes in thin catalytic metal films dedicated for sensors application

et al. 2011

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Abstract:In the paper results of investigation of the influence of low concentration hydrogen on stress changes in thin catalytic metal films were discussed. The concentration of H 2 was altered from 6 ppm to 1% of hydrogen (6N) in nitrogen (6N). Silicon beams covered with palladium or platinum films of various thicknesses were anchored at one end and their deflection at the other end was measured by atomic force microscope. Stress changes were determined by application of modified Stoney formula and compared with results of computer modelling. The influence of stress caused by hydrogen absorption on the alteration of output characteristics of AIII-N based hydrogen sensors was excluded. The time dependence of stress in metallic films for various hydrogen concentrations indicated dissociation limited mechanism of hydrogen absorption.

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“…For investigations purposes silicon (111) was used to exclude anisotropy of mechanical parameters [7]. The beams were fabricated by chemical treatment and mechanical cutting.…”

Section: Methodsmentioning

confidence: 99%

Influence of hydrogen absorption on stress changes in thin catalytic metal films dedicated for sensors application

et al. 2011

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“…(100), (110), and (111) shown in Fig. 2 are the most common crystal orientations of silicon crystals [10], and these orientations were considered in the present work.…”

Section: Elastic Modulimentioning

confidence: 99%

“…Silicon is one of the well-known materials, and simple cubic interpretation of silicon crystal structure enabled immense theoretical analysis of silicon wafers [10]. A proper coordinate transformation to the known stiffness tensor gives the elastic constants for a given propagation direction.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Slowness Profiles of Lamb Wave with Elastic Moduli and Crystal Structure in Single Crystalline Silicon Wafers

Min¹,

Yun²,

Kim³

et al. 2016

Journal of the Korean Society for Nondestructive Testing

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Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

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“…According to Poisson's effect [20], a compressive stress |σ 22 | = −ν · |σ 11 | is induced along the X 2 -axis. The Poisson's ratio of Si ν <100>/(001) =0.279 [21].…”

Section: A Fem Simulationmentioning

confidence: 99%

“…where E is the elasticity modulus of Si (E <100>/(001) = 130.2 GPa) and X 3 [21] is the distance from the neutral surface to the point of interest (e.g. X 3 = H/2).…”

Section: A Fem Simulationmentioning

confidence: 99%

Towards bendable CMOS magnetic sensors

Heidari

Wacker

Roy

et al. 2015

2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Abstract-This paper analyses the bending-induced stress effects on ultra-thin cross-shaped magnetic sensors operating in voltage-or current-modes. Both the magnetic sensor's sensitivity and the offset drift have been analysed. The optimum geometry and thickness of the Hall sensor are the important parameters to be analysed to compensate any mechanical stress related effect on the performance of sensors. Numerical simulations are carried out using the finite element method (FEM) with COMSOL Multiphysics software. A compact model is implemented in Verilog-A and used for the simulations in Cadence c Spectre, considering a 350 nm CMOS process. The simulation results focus on magnetic sensor's sensitivity variation and offset drift induced by bending of the substrate. The simulation results show a sensitivity of 71 V/AT at 100 mT. Interestingly, the sensitivity variation induced by 250 MPa applied uniaxial stress is less than 0.02 %.

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Why is (111) Silicon a Better Mechanical Material for MEMS?

Cited by 90 publications

References 11 publications

Influence of hydrogen absorption on stress changes in thin catalytic metal films dedicated for sensors application

Influence of hydrogen absorption on stress changes in thin catalytic metal films dedicated for sensors application

Comparison of Slowness Profiles of Lamb Wave with Elastic Moduli and Crystal Structure in Single Crystalline Silicon Wafers

Towards bendable CMOS magnetic sensors

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