GCE/poly-4,4′-bBT/tyrosinase biosensor for epinephrine was constructed. Comparison of differential pulse voltammetry (DPV) and chronoamperometry was performed. DPV showed more reproducible results giving high selectivity, sensitivity, stability.
Based on a virtual GaN substrate approach on Si(111) by a step graded double oxide (Sc2O3/Y2O3) buffer, we report a “proof of principle” study on the enhanced photo-response of ultraviolet GaN photo-detectors due to embedded DBRs (distributed Bragg reflectors). Embedded DBRs benefit from an order of magnitude lower number of superlattice sequences in contrast to III- nitride systems due to the high refractive index contrast between high-k Y2O3 and low-k Si. The UV (ultraviolet) reflectance efficiency of the designed DBR is proven by a considerable photo-response increase in the UV range in comparison to reference GaN layers on Si(111) without DBRs.
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