Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors

Szyszka, A.; Lupina, L.; Lupina, G.; Mazur, М.; Schubert, Markus Andreas; Storck, P.; Thapa, S. B.; Schroeder, Thomas

doi:10.1063/1.4861000

Cited by 22 publications

(10 citation statements)

References 28 publications

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“…The detailed description of DBR operation and its impact on generation rate in GaN layer, photoresponse voltage, and spectral characteristic can be found in Ref. 15. The spectral characteristics of the detector structure with combined embedded distributed Bragg reflector and M-O-S contact (5 nm thick oxide layer) ( Fig.…”

Section: Gan/dbr/si M-s-m Detector Structurementioning

confidence: 99%

“…The stress values in the GaN films on embedded DBR amount to 0.56 GPa and to 0.76 GPa in case of the GaN/oxides/Si(111) without DBR heterostructures. 15 Initial evaluation of the GaN crystalline perfection is obtained from the full with at half maximum (FWHM) of the rocking curves ( Fig. 6(b)), which is 0.80 and 0.65 for the GaN on DBR/Si structures and GaN on oxide/Si stacks, respectively.…”

Section: B Structure Quality Of the Gan Films Grown On Si With Embedmentioning

confidence: 99%

“…10 In recent years, the integration of the DBRs into IIInitrides semiconductor system has gained much attention due to their beneficial role in improving performance of optoelectronic devices as blue/green light sources (resonantcavity light emitting diodes (RC LEDs) 11 and vertical-cavity surface emitting lasers (VCSELSs) 12 ) as well as UV detectors. 13,14 In our previous work, 15 we have introduced the concept (presented schematically in Fig. 1) of metal-semiconductor-metal (M-S-M) detector with embedded Y 2 O 3 /Si based DBR.…”

mentioning

confidence: 99%

“…These problems motivated our investigations for alternative methods for DBR integration into III-N based UV photodetector systems with application of epitaxial layers of Y 2 O 3 and Si. After a "proof of principle" study on the successful photo-response enhancement of UV GaN M-S-M detectors due to embedded DBRs, 15 we concentrate in this paper on a detailed structural study of the in-situ grown GaN/Sc 2 O 3 / 3.5 Â (Y 2 O 3 /Si)/Si heterostructure to identify its characteristic properties which determine the performance of the detector. Additionally, we present clear performance increase of the UV detector due to fabrication of the detector structures with metal-oxide-semiconductor (MOS) contacts to suppress leakage related dark currents.…”

mentioning

confidence: 99%

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Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

Szyszka

Lupina²,

Lupina³

et al. 2014

Journal of Applied Physics

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Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y2O3 films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

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Section: Gan/dbr/si M-s-m Detector Structurementioning

confidence: 99%

Section: B Structure Quality Of the Gan Films Grown On Si With Embedmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

Szyszka

Lupina²,

Lupina³

et al. 2014

Journal of Applied Physics

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“…15,16 But the low mechanical strength and the tiny highly reective area of the air-gap/GaN DBR structure remain a challenge for the photonic device fabrication. Y 2 O 3 /Si, 17 Gd 2 O 3 /Si, 18 AlN/GaN, 19 and AlN/AlGaN 20 DBR structures had been reported for GaN-based optoelectronic devices. Embedded dielectric distributed Bragg reectors, 21,22 Ti 3 O 5 /Al 2 O 3 DBRs, 23 and ITO/dielectric DBRs 24 had been reported to enhance the light extraction process in LED structures.…”

Section: Introductionmentioning

confidence: 99%