Anisotropic properties of pipe-GaN distributed Bragg reflectors

Wu, C.; Chen, Yiyun; Wang, Chengjie; Shiu, Guo-Yi; Huang, Chin‐Yu; Liu, Heng Jui; Chen, Hsiang; Lin, Yung‐Sen; Lin, Chia−Feng; Han, Jung

doi:10.1039/c9na00743a

Cited by 7 publications

(8 citation statements)

References 44 publications

(44 reference statements)

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“…The second type of cavity, labeled as resonance B (R B ) for 16, 17, and 18 modes, was determined with a 1.50 μm-thick cavity length and a 2.35 effective refractive index. The similar resonant thickness difference between R A and R B indicated the small refractive index difference caused by the anisotropic properties 21 of the EC-treated NP-GaN layers in the NP-GaN DBR structure. Two groups of cavity lengths were measured at about 1.50 μm for P1/P3/P5 and 1.48 μm for P2/P4 peaks, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The n + -GaN layers were transformed to the nanoporous (NP) GaN structure with pipe-shaped GaN layers in the stack structure through an electrochemical (EC) wet etching process with a 7.5 V bias voltage in a 2.2 M nitric acid solution. The anisotropic refractive index of the pipe-shaped GaN layers had been reported in our previous report . Following the EC wet etching process, a mesa area was formed by photolithography and the Cl 2 /BCl 3 mixed ICP-RIE process to define the mesa and ITO regions.…”

Section: Methodsmentioning

confidence: 99%

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Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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InGaN resonant-cavity light-emitting diodes (RC-LEDs) with a dielectric distributed Bragg reflector (DBR), a porous-GaN DBR, and a nitrogen ion (N + )-implanted aperture (6 μm diameter) were demonstrated. In the ion implantation process, the N + ions were penetrated directly through an indium-tin-oxide conductive layer and SiO 2 layer to form the insulated p-GaN:Mg layer, which provides a fascinating current confinement structure. The broadened electroluminescence (EL) peaks were measured at 401.5 and 435.8 nm in the implanted LED without double DBR structures. Multiple EL emission peaks with narrow line widths were observed in the RC-LED structure, indicating a strong resonant effect with different cavity modes. Two groups of effective resonant-cavity lengths, 1.48 and 1.50 μm, were analyzed through the angle-resolved EL spectra due to the anisotropic porous-GaN layers in the porous DBR structure. The divergent angles in far-field EL radiation patterns were reduced from 118°for the nontreated LED to 28°for the RC-LED structures. A high resonant-cavity effect, line-width narrowing phenomenon, and small divergent angle were observed in the InGaN RC-LED with 6 μm-diameter ion-implanted aperture and top dielectric/bottom porous DBR structures.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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“…The deviation from perfect alignment, which was used in producing Figure f, occurs in at least two ways. The first one is the deviation in the parallel alignment as nanopores under different porosification conditions can branch and even crisscross with each other . Another less obvious effect is the misalignment in the stacking of nanopores along the DBR (epitaxial) direction.…”

Section: Computer Simulationsmentioning

confidence: 99%

Study and Application of Birefringent Nanoporous GaN in the Polarization Control of Blue Vertical-Cavity Surface-Emitting Lasers

ElAfandy

Kang

et al. 2021

ACS Photonics

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III-Nitride vertical-cavity surface-emitting lasers (VCSELs) have attracted much attention during the last two decades. Control of the laser polarization in VCSELs is one of the main challenges that needs to be addressed for real applications. In this work a novel polarization locking technique for GaN VCSELs is presented by employing birefringent nanoporous distributed Bragg reflectors (DBRs). The birefringence arises from a nanophotonic effect of evanescent field enhancement in the anisotropically aligned nanopores. Furthermore, the birefringence dependence over the nanopores morphology is explored. A fully electrically injected blue VCSEL with polarization locking is demonstrated. As presented, this technique allows to individually define the polarization angle in a planar array, opening the path to novel applications.

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“…The lasing properties of the InGaN VCSELs with the porous-GaN DBR structures were reported [22,23]. The mechanical [24], thermal [25], and electrical [23] properties of the InGaN devices with porous structures have been reported. The InGaN-based LED consisted of a 6λ cavity length and an embedded nanoporous DBR structure, without the top DBR structure, were reported in our previous report [26].…”

Section: Introductionmentioning

confidence: 99%

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

Wang

Shiu

et al. 2020

Applied Sciences

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InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

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Anisotropic properties of pipe-GaN distributed Bragg reflectors

Abstract: Polarization-dependent reflectance spectra of the pipe-GaN reflector show that it can be used as a polarized light source.

Cited by 7 publications

References 44 publications

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Study and Application of Birefringent Nanoporous GaN in the Polarization Control of Blue Vertical-Cavity Surface-Emitting Lasers

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

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