Comparison of Slowness Profiles of Lamb Wave with Elastic Moduli and Crystal Structure in Single Crystalline Silicon Wafers

Min, Young-Jae; Yun, Gyeongwon; Kim, Kyung Min; Roh, Yuji; Kim, Young H.

doi:10.7779/jksnt.2016.36.1.1

Cited by 3 publications

(1 citation statement)

References 11 publications

(12 reference statements)

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“…12) The measured surface wave velocities in a z-cut quartz were compared with the calculated ones. 13) Recently, circumferential Lamb waves 14) and Lamb waves in anisotropic plates 15,16) have been measured using a line-focused PVDF transducer, and the crystallographic orientation was determined by a laser ultrasonic technique for hexagonal structure crystals. 17) Unlike many previous studies, experiments were focused on anisotropic materials and silicon single crystals with various cuts, and computer simulations were carried out to confirm the data in advance.…”

Section: Introductionmentioning

confidence: 99%

Measurement of ultrasonic surface wave velocities in silicon crystals and its comparison with finite element analysis

Park¹,

Lee²,

Lee³

et al. 2017

Jpn. J. Appl. Phys.

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The velocities of leaky surface acoustic waves (SAWs) have been measured using a large-aperture line-focused transducer for three silicon single crystals (namely, Si-100, Si-110, and Si-111). While rotating the specimen, velocities were measured as a function of propagation direction. The slowness curves of the SAWs show good agreement with the crystal structures of the specimens. Finite element method (FEM) simulation has also been carried out for silicon crystals and the results were compared with the measurement results. The FEM results can explain the measured ones. This method has high potential for determining crystal structures.

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Section: Introductionmentioning

confidence: 99%

Measurement of ultrasonic surface wave velocities in silicon crystals and its comparison with finite element analysis

Park¹,

Lee²,

Lee³

et al. 2017

Jpn. J. Appl. Phys.

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High-Frequency Guided Wave Propagation and Scattering in Silicon Wafers

Robyr

Simon

Masserey

et al. 2021

Journal of Nondestructive Evaluation, Diagnostics and Prognostics of Engineering Systems

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Thin monocrystalline silicon wafers are employed for the manufacture of solar cells with high conversion efficiency. Micro-cracks can be induced by the wafer cutting process, leading to breakage of the fragile wafers. High frequency guided waves allow for the monitoring of wafers and detection and characterization of surface defects. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the guided wave mode and propagation direction relative to the crystal orientation. Selective excitation of the first anti-symmetric A0 wave mode at 5 MHz center frequency was achieved experimentally using a custom-made wedge transducer. Strong wave pulses with limited beam skewing and widening were measured using non-contact laser interferometer measurements. This allowed the accurate characterization of the Lamb wave propagation and scattering at small artificial surface defects with a size of less than 100 µm. The surface extent of the defects of varying size was characterized using an optical microscope. The scattered guided wave field was evaluated, and characteristic parameters extracted and correlated to the defect size, allowing in principle detection of small defects. Further investigations are required to explain the systematic asymmetry of the guided wave field in the vicinity of the indents.

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Lamb wave propagation in monocrystalline silicon wafers

Fromme

Pizzolato

Robyr

et al. 2018

The Journal of the Acoustical Society of America

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Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness and beam skewing of the two fundamental Lamb wave modes A and S were investigated. Experimental measurements using contact wedge transducer excitation and laser measurement were conducted. Good agreement was found between the theoretically calculated angular dependency of the phase slowness and measurements for different propagation directions relative to the crystal orientation. Significant wave skew and beam widening was observed experimentally due to the anisotropy, especially for the S mode. Explicit finite element simulations were conducted to visualize and quantify the guided wave beam skew. Good agreement was found for the A mode, but a systematic discrepancy was observed for the S mode. These effects need to be considered for the non-destructive testing of wafers using guided waves.

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Comparison of Slowness Profiles of Lamb Wave with Elastic Moduli and Crystal Structure in Single Crystalline Silicon Wafers

Cited by 3 publications

References 11 publications

Measurement of ultrasonic surface wave velocities in silicon crystals and its comparison with finite element analysis

Measurement of ultrasonic surface wave velocities in silicon crystals and its comparison with finite element analysis

High-Frequency Guided Wave Propagation and Scattering in Silicon Wafers

Lamb wave propagation in monocrystalline silicon wafers

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