Abstract-In this paper, using three-dimensional statistical numerical simulations, the authors study the intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness (LER), and oxide-thickness variations in realistic bulk MOSFETs scaled to 25, 18, 13, and 9 nm. The scaling is based on a 35 nm MOSFET developed by Toshiba, which has also been used for the calibration of the authors' "atomistic" device simulator. Special attention is paid to the accurate resolution of the individual discrete dopants in the drift-diffusion simulations by introducing density-gradient quantum corrections for both electrons and holes. In the LER simulations, two scenarios have been adopted: In the first one, LER follows the prescriptions of the International Roadmap for Semiconductors; in the second one, LER is kept constant close to the current best values. Combined effects of the different sources of intrinsic parameter fluctuations have also been simulated in the 35 nm reference devices and the results for the standard deviation of the threshold voltage compared to the measured values.

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Convex optimization problems arising in applications often have favorable objective functions and complicated constraints, thereby precluding first-order methods from being immediately applicable. We describe an approach that exchanges the roles of the objective and constraint functions, and instead approximately solves a sequence of parametric level-set problems. A zero-finding procedure, based on inexact function evaluations and possibly inexact derivative information, leads to an efficient solution scheme for the original problem. We describe the theoretical and practical properties of this approach for a broad range of problems, including low-rank semidefinite optimization, sparse optimization, and generalized linear models for inference.

With the use of dynamic random-dot sterograms (which are devoid of all monocular depth cues), the temporal duration for detecting a small, briefly presented test square of different depth than the surround varied as a function of its location in the central portion of the visual field. Test squares presented in the upper hemifield were detectable at consistently shorter durations than those in the lower hemifield when the fixation marker was in front of the surround, and vice versa when the marker was behind. No such anisotropy was found for left and right hemifield. Esploratory studies suggested a similar up-down anisotropy and left-right isotropy in spatial resolution. Thus, the upper hemifield representation at the cortex shows a general superiority over the lower one for vinocular detectors tuned to uncrossed disparitites, and the lower hemifield shows superiority for those tuned to crossed disparities.

This paper is based on a comprehensive review of the literature and our own studies. We present a summary of the theoretical models and related empirical expressions to evaluate parameters related to the carrier transport within Si/SiGe heterostructures. The models and expressions include the effects of alloy composition and mechanical strain on the band structure of Si/SiGe alloys and the corresponding interfaces. They are presented in a form suitable for implementation in various types of device simulators. Important parameters, such as the band structure of strained or relaxed SiGe, the conduction and valence band offsets in the Si 1−x Ge x /Si 1−y Ge y heterostructures, the effective transport masses and the densities of states, have been calculated and shown to be in good agreement with existing experimental and theoretical results. Analytical expressions of those parameters as a function of Ge composition of the SiGe alloy have been given for strained Si on relaxed Si 1−y Ge y substrate and strained Si 1−x Ge x on Si substrate.

The conventional method of diagnosing disorders of the human gastro-intestinal (GI) tract is by sensors embedded in cannulae that are inserted through the anus, mouth, or nose. However, these cannulae cause significant patient discomfort and cannot be used in the small intestine. As a result, there is considerable ongoing work in developing wireless sensors that can be used in the small intestine. The radiation characteristics of sources in the GI tract cannot be readily calculated due to the complexity of the human body and its composite tissues, each with different electrical characteristics. In addition, the compact antennas used are electrically small, making them inefficient radiators. This paper presents radiation characteristics for sources in the GI tract that should allow for the optimum design of more efficient telemetry systems. The characteristics are determined using the finite-difference time-domain method with a realistic antenna model on an established fully segmented human body model. Radiation intensity outside the body was found to have a Gaussian-form relationship with frequency. Maximum radiation occurs between 450 and 900 MHz. The gut region was found generally to inhibit vertically polarized electric fields more than horizontally polarized fields.

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In this work, we train an Automatic Post-Editing (APE) model and use it to reveal biases in standard Machine Translation (MT) evaluation procedures. The goal of our APE model is to correct typical errors introduced by the translation process, and convert the "translationese" output into natural text. Our APE model is trained entirely on monolingual data that has been round-trip translated through English, to mimic errors that are similar to the ones introduced by NMT. We apply our model to the output of existing NMT systems, and demonstrate that, while the human-judged quality improves in all cases, BLEU scores drop with forward-translated test sets. We verify these results for the WMT18 English→German, WMT15 English→French, and WMT16 English→Romanian tasks. Furthermore, we selectively apply our APE model on the output of the top submissions of the most recent WMT evaluation campaigns. We see quality improvements on all tasks of up to 2.5 BLEU points.