Si/SiGe heterostructure parameters for device simulations

Abstract

This paper is based on a comprehensive review of the literature and our own studies. We present a summary of the theoretical models and related empirical expressions to evaluate parameters related to the carrier transport within Si/SiGe heterostructures. The models and expressions include the effects of alloy composition and mechanical strain on the band structure of Si/SiGe alloys and the corresponding interfaces. They are presented in a form suitable for implementation in various types of device simulators. Important parameters, such as the band structure of strained or relaxed SiGe, the conduction and valence band offsets in the Si 1−x Ge x /Si 1−y Ge y heterostructures, the effective transport masses and the densities of states, have been calculated and shown to be in good agreement with existing experimental and theoretical results. Analytical expressions of those parameters as a function of Ge composition of the SiGe alloy have been given for strained Si on relaxed Si 1−y Ge y substrate and strained Si 1−x Ge x on Si substrate.

Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

“…The two-dimensional electron gas is defined in the thin silicon layer with tensile strain. 38,87 The in-plane effective mass is isotropic, given by the transverse mass of the X valley states, 41 and we use m = 0.198m e , 88 where m e is the free-electron mass. The effective Landé factor is g = 2.…”

Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

“…Both lateral field-dependent and perpendicular field dependent mobility models [8] have been used in the calibration, along with parameter modifications accounting for strain effects within the Si/SiGe heterostructure [9]. The calibrated device structures and doping profiles are then fed into our Monte Carlo device simulator.…”

Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

“…Devices strained with different materials successfully attract attention and are still under explored [1,2]. Strained transistors are one of potential candidates for the next generation high-performance devices technology.…”