Abstract:Radical oxidation at thickness of under 2.0 nm in an ultrahigh vacuum (UHV) system with an electron cyclotron resonance (ECR) plasma has been studied. The interface roughness and oxide density were evaluated by atomic force microscopy (AFM) and grazing incidence xray reflectrometry, respectively. We found the oxide thickness could be easily controlled at Tsub = 750'C when using radical oxygen at 5.0x10 3 Torr. The interface roughness at a thickness of 1.8 nm, measured by the root mean square (RMS), was 0.11 nm… Show more
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