IEEE Trans. Electron Devices
 2002
DOI: 10.1109/ted.2002.802634
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Improving the quality of sub-1.5-nm-thick oxynitride gate dielectric for FETs with narrow channel and shallow-trench isolation using radical oxygen and nitrogen

M. Togo
1
,
Kôji Watanabe
2
,
M. Terai
3
et al.
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