Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETs

Togo, M.; Watanabe, Kôji; Terai, M.; Kimura, Shigeru; Yamamoto, Tetsuya; Tatsumi, Toru; Mogami, Tohru

doi:10.1109/ted.2002.803640

Cited by 7 publications

(5 citation statements)

References 21 publications

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“…Silicon oxynitride (SiO x N y ) became a promising material for sub-micron MOS thin gate insulators due to its high radiation hardness, low defect density, low gate threshold shifts and low impurity diffusion [1][2][3][4][5]. The improved dielectric reliability is mainly due to the pile up of the incorporated nitrogen in the vicinity of the SiO 2 /Si interface.…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

Felicio¹,

Diniz²,

Fo³

et al. 2020

JICS

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Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electrical characteristics, such as field effect mobility between 390 cm2/Vs and 530 cm2/Vs, and sub-threshold slope between 70 mV/decade and 150 mV/decade, were obtained. MOS capacitors were used to obtain capacitance-voltage (C-V) and current-voltage (I-V) measurements. The Equivalent Oxide Thickness (EOT) of the films were obtained from C-V curves, resulting in values between 2.9 nm and 12 nm. SiOxNy gate insulators with EOT between 2.9 nm and 4.3 nm have presented gate leakage current densities between 3 mA/cm2 and 50 nA/cm2. The electrical characteristics were compared and correlated with the nitrogen concentration profiles at SiOxNy/Si of the structures, obtained by Secondary Ion Mass Spectrometry (SIMS).

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Section: Introductionmentioning

confidence: 99%

“…The Si-N bonds replace the strained Si-O bonds at the SiO 2 /Si interface, decreasing the interface strain [6]. Several silicon oxide nitridation techniques have been widely investigated [1][2][3][4][5][6]. Nowadays, much attention has been directed to nitridation by nitrogen or nitric oxide ion implantation [2,5,[7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

Felicio¹,

Diniz²,

Fo³

et al. 2020

JICS

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“…9 Plasma nitridation is a promising technique to form silicon oxynitride ͑SiON͒ gate dielectric films and now being utilized in industry. [12][13][14][15] The unique character of this process is excellent controllability of nitrogen concentration and profile under low substrate temperature ͑Ͻ400°C͒. Also several promising electrical properties have been already reported.…”

Section: Introductionmentioning

confidence: 99%

Physical and electrical properties of plasma nitrided germanium oxynitride

Sugawara¹,

Sreenivasan²,

McIntyre³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The physical and electrical properties of plasma nitrided germanium oxynitride (GeON) and silicon oxynitride (SiON) layers are studied. In this study, two kinds of plasma nitridation process were utilized to form oxynitride layers. High pressure remote inductive coupled plasma and low pressure radial line slot antenna (RLSA) plasma provide radical dominant and ion dominant plasma nitridation processes, respectively. X-ray photoelectron spectroscopy results show different properties of GeON layers based on each plasma nitridation process. The remote (radical) plasma nitridation forms water soluble nitrogen-germanium bonding, and RLSA (ion) plasma nitridation forms water resistant nitrogen-germanium bonding. Although hydrogen containing plasmas or ion dominant plasma process can incorporate high amount of nitrogen into oxynitride layers, such process is accompanied by water insoluble suboxide formation and charging damage. Using p-type metal oxide semiconductor (MOS) capacitors, basic electrical properties of GeON and SiON films were also studied. Approximately four order magnitude higher gate leakage current was observed on GeON MOS capacitor, which results in capacitance reduction and a large dissipation factor at high gate voltage.

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“…1,2) On the other hand, the plasma nitridation can incorporate much more nitrogen atoms. [3][4][5] In the plasma nitridation processes, nitrogen atoms are incorporated at around the SiO 2 top surface and sound interfacial properties can be obtained. Consequently, the plasma nitridation is more promising than thermal processes.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

Sugawara

Matsuyama

Sasaki

et al. 2005

Jpn. J. Appl. Phys.

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Flame-resistant clothing or fabrics against thermal exposure is a crucial requirement in order to ensure people survivability and to protect the structure. A model-based method was developed to evaluate the thermal performance of flame-resistant fabrics used in protective clothing. The skin simulant sensor is used to determine the heat flux at the skin simulant surface from the elevation of temperature of the skin simulant surface. The heat flux is then applied to a newly developed skin thermal wave model (STWM) instead of Pennes' model, which inherits some questionable physical and physiological aspects, and the Henriques burn integral is incorporated into the new model to predict the level of skin injury. Results of tolerance time from the Stoll criterion method are also compared with those from the Henriques method with two skin models (Pennes' model and STWM) by a thermal protective performance calorimeter. Deviations between the STWM and the traditional Pennes' equation imply that the STWM, which accounts for finite thermal wave propagation, may provide realistic predictions on burn evaluation. The comparison measurements show that the test results by the STWM correlated well with those obtained from the Henriques method with Pennes' model. Therefore, this test method provides a new technique to accurately and precisely characterize the thermal performance of flame-resistant fabrics.

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Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETs

Cited by 7 publications

References 21 publications

The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

Physical and electrical properties of plasma nitrided germanium oxynitride

Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

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