Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma

Abstract

Flame-resistant clothing or fabrics against thermal exposure is a crucial requirement in order to ensure people survivability and to protect the structure. A model-based method was developed to evaluate the thermal performance of flame-resistant fabrics used in protective clothing. The skin simulant sensor is used to determine the heat flux at the skin simulant surface from the elevation of temperature of the skin simulant surface. The heat flux is then applied to a newly developed skin thermal wave model (STWM) instead of Pennes' model, which inherits some questionable physical and physiological aspects, and the Henriques burn integral is incorporated into the new model to predict the level of skin injury. Results of tolerance time from the Stoll criterion method are also compared with those from the Henriques method with two skin models (Pennes' model and STWM) by a thermal protective performance calorimeter. Deviations between the STWM and the traditional Pennes' equation imply that the STWM, which accounts for finite thermal wave propagation, may provide realistic predictions on burn evaluation. The comparison measurements show that the test results by the STWM correlated well with those obtained from the Henriques method with Pennes' model. Therefore, this test method provides a new technique to accurately and precisely characterize the thermal performance of flame-resistant fabrics.

Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes

“…It can achieve 0.7 to 1.0% thickness non-uniformity for films of 1.5 to 10 nm with D it values o10 10 eV À1 cm À2 at temperatures as low as 400 1C. 19 A 2.45 GHz microwave is introduced from the top of the apparatus and distributed across the slot plane antenna (schematic in ESI, † S1). As the microwaves are emitted downward they generate a uniform, high density plasma below the dielectric shower plate with a diameter exceeding 30 cm, capable of uniformly covering large wafers.…”

Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes

“…Process gases are introduced and excited in the ICP source, then introduced via the quartz tube to the sample surface. Another one is radial slot plain antenna (RLSA) plasma nitridation [8,9]. In this process, microwave is introduced and distributed over the antenna, emitted through slot downward, and it forms high density uniform plasma over large substrate area.…”

“…In this process, low pressure (<100mTorr) RLSA plasma nitridation process was used [8,9]. Ar/N 2 gas mixture was used as process gas and H 2 gas was not added.…”

“…Plasma nitridation is a promising technique to form silicon oxynitride (SiON) gate dielectric films and now being utilized in industry [7][8][9]. The unique character of this process is excellent controllability of nitrogen concentration and profile under low substrate temperature (<400˚C).…”

The Effect of SPA-SiO2 Tunnel Oxide Thickness for Metal-Insulator-Silicon Photoelectrochemical Cells

“…Inert gases and oxygen are emitted through nozzles around the gas ring and the substrate is heated resistively to temperatures between 400 and 500˚C. The plasma allows for radical oxidation that can achieve ultrathin oxide layers with reproducibility equal to or greater than thermal oxidation, and at significantly lower temperatures--achieving only 0.7 to 1.0 % thickness non-uniformity for films of approximately 1.5 to 10 nm at temperatures as low as 400˚C (12).…”