By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.

The use of two dimensional (2D) materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academy and industry. While the research on 2D metallic and semiconducting materials is well established, the knowledge and 2 applications of 2D insulators are still very scarce. In this report we study the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) using different electrode materials, and we engineer a family of h-BN based resistive random access memories with tunable capabilities.The devices show the coexistence of forming-free bipolar and threshold type RS with low operation voltages down to 0.4 V, high current on/off ratios up to 10 6 , long retention times above 10 hours, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which is more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistance of bipolar and threshold RS, which may open the door to additional functionalities and applications.Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

A passive turnoff Passive radiative cooling technology uses the infrared atmospheric window to allow outer space to be a cold sink for heat. However, this effect is one that is only helpful for energy savings in the warmer months. Wang et al . and Tang et al . used the metal-insulator transition in tungsten-doped vanadium dioxide to create window glass and a rooftop coating that circumvents this problem by turning off the radiative cooling at lower temperatures. Because the transition is simply temperature dependent, this effect also happens passively. Model simulations suggest that these materials would lead to energy savings year-round across most of the climate zones in the United States. —BG

Stimulated by the recent experimental synthesis of a new layered carbon allotrope-graphdiyne film, we provide the first systematic ab initio investigation of the structural and electronic properties of bilayer and trilayer graphdiyne and explore the possibility of tuning the energy gap via a homogeneous perpendicular electric field. Our results show that the most stable bilayer and trilayer graphdiyne both have their hexagonal carbon rings stacked in a Bernal way (AB and ABA style configuration, respectively). Bilayer graphdiyne with the most and the second most stable stacking arrangements have direct bandgaps of 0.35 eV and 0.14 eV, respectively; trilayer graphdiyne with stable stacking styles have bandgaps of 0.18-0.33 eV. The bandgaps of the semiconducting bilayer and trilayer graphdiyne generally decrease with increasing external vertical electric field, irrespective of the stacking style. Therefore, the possibility of tuning the electronic structure and optical absorption of bilayer and trilayer graphdiyne with an external electric field is suggested.

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.