Ultra-high thermal stability and extremely low D on HfO2/p-GaAs(001) interface

Wan, Hsien-Wen; Lin, Yuan-Hsiang; Lin, Kai‐Wei; Chang, Teng-Jan; Cai, Ren‐Fong; Kwo, J.; Hong, M.

doi:10.1016/j.mee.2017.05.037

Cited by 10 publications

(7 citation statements)

References 17 publications

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“…The option for electron-beam deposition and/or thermal deposition of films has been typically integrated with MBE. [24][25][26][27][28][294][295][296][297][298][299] One of the lowest Dit, 5×10 10 eV -1 cm -2 was obtained by means of the MBE passivation for Ga2O3/GaAs interface. 26 That is consistent also with the PL results showing almost same PL intensity for Ga2O3/GaAs and epitaxial AlGaAs/GaAs systems.…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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The control of interfacial physicochemical properties associated with device materials to minimize the impact of point defects on device performance has been a dominant theme in the semiconductor industry.The control of the density of such defects for silicon has been well established for metal oxidesemiconductor field-effect device applications through deliberate reactions with chemically congruent species, such as hydrogen. In contrast, the control of interfacial defects for technologically important III-V device materials is still an active area of research. Performance criteria for the III-V devices are demanding in terms of energy efficiency, material consumption, sensitivity, and speed. The surface reactions of III-V crystals, including the oxidation, are typically known to result in performance limitation for devices, causing significant degradation due to high defect-level densities at the surfaces/interfaces, in contrast to high quality bulk crystal regions. Here, we discuss the approach of utilizing atomically thin, ordered oxide interfacial layers of III-V compound semiconductors, since they provide a unique opportunity for metal-oxide semiconductor applications, compared to the more common approach to avoid the surface oxidation. The long-range ordered oxide interfaces have been obtained by

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Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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“…The frequency dispersion in the depletion region was extracted at the flat-band voltage ( V fb ), where V fb was determined using the inflection point method . For the UHV-annealed sample, the removal of As atoms and hydroxyls in the first 1-nm Y 2 O 3 film contributed to the trap reduction in the oxide film, resulting in smaller frequency dispersions in the C – V curves from the accumulation to depletion regions. ,, For high-κ dielectrics on III–V compound semiconductors such as GaAs, the large frequency dispersions in the depletion region are associated with the pronounced D it peaks across the band gap, while those C–V curves with small frequency dispersions in previous reports are consistent with the attainment of low D it values. ,, The significant reduction of frequency dispersion in the depletion region has proved the effectiveness of UHV annealing in eliminating the interfacial defects.…”

Section: Resultsmentioning

confidence: 99%

“…36,38,39 For high-κ dielectrics on III−V compound semiconductors such as GaAs, the large frequency dispersions in the depletion region are associated with the pronounced D it peaks across the band gap, 40 while those C−V curves with small frequency dispersions in previous reports are consistent with the attainment of low D it values. 10,41,42 The significant reduction of frequency dispersion in the depletion region has proved the effectiveness of UHV annealing in eliminating the interfacial defects.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Chen

Lin

et al. 2023

ACS Appl. Electron. Mater.

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Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low trap densities is the key to high-performance metal−oxide−semiconductor (MOS) devices. Atomic layer deposition (ALD) has been employed in precise thin oxide depositions with relatively low temperatures in the semiconductor device fabrication industry. Herein, we compare the electronic structures of nanometer-thick ALD-Y 2 O 3 on freshly grown GaAs(001)−4 × 6 without and with ultrahigh vacuum (UHV) annealing to 600 °C. In situ X-ray photoelectron spectroscopy (XPS) and in situ synchrotron radiation photoelectron spectroscopy (SRPES) with the best surface sensitivity were utilized to study the samples, whose pristine conditions were preserved under UHV between the growth and the characterization. In the Y 2 O 3 film, the surface Y−OH bonding and the pure As atoms resulting from the ALD process were completely removed with UHV annealing. Additionally, no O deficiency was detected in the resolution limit of XPS, indicating the intactness of the O−Y bonding. The UHV annealing has reduced traps in the Y 2 O 3 film, leading to smaller frequency dispersions in the measured capacitance−voltage (C−V) curves of the MOS capacitors (MOSCAPs). At the same time, the enriched Ga−O−Y bonds effectively passivated the GaAs surface and strongly stabilized the Y 2 O 3 /GaAs interface, resulting in lower interfacial trap density (D it ) values from (2−3) × 10 12 eV −1 cm −2 to (0.7−2) × 10 12 eV −1 cm −2 and maintaining the high-temperature stability. We have elucidated the effects of UHV annealing on the interfacial chemistry and the thin oxide film of the ALD-Y 2 O 3 /GaAs(001)−4 × 6 in an atomic scale, and have correlated the electronic characteristics of the heterostructure with the electrical properties of the MOSCAPs.

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“…As a result, the performance of the insulator is poorer than that of the other samples, and some leakage can occur at the MOS capacitor. 31,32 A high ratio of defects such as oxygen vacancies in the thin film results in the formation of paths along which electrons can move. These paths can become the main cause of leakage current in the dielectric.…”

Section: Resultsmentioning

confidence: 99%

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Kim

Cho

et al. 2021

ECS J. Solid State Sci. Technol.

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The improvement in the charge storage characteristics in a non-volatile memory (NVM) device employing an ultraviolet (UV)-treated hafnium oxide (HfO2) layer as the charge-trapping layer is reported. X-ray photoelectron spectroscopy analysis was performed to characterize the Hf 4f and O 1s peaks. The defect densities corresponding to Hf and O after short-term UV treatment are 24.74% and 14.16%, respectively. The electrical characteristics, such as the interface trap density (Dit), dielectric constant, and flat band voltage (VFB), of single HfO2 thin films were determined via capacitance vs voltage (C–V) measurements of the fabricated metal–oxide–semiconductor (MOS) capacitors. Notably, this memory device has a maximum ΔVth of 4.10 V at 15 V, which corresponds to a 33.4% improvement in memory storage characteristics compared to those of an as-deposited HfO2 thin film-based memory. In addition, the charge retention after 10 years is 80.22%, which is superior to that of the as-deposited case. These results demonstrate the possibility of realizing high-efficiency TFT NVM devices using high-K materials, and are expected to enable further research on semiconductor devices using high-K materials as well as next-generation memory semiconductors using UV treatment.

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Ultra-high thermal stability and extremely low D on HfO2/p-GaAs(001) interface

Cited by 10 publications

References 17 publications

Passivation of III–V surfaces with crystalline oxidation

Passivation of III–V surfaces with crystalline oxidation

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

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Ultra-high thermal stability and extremely low D on HfO2/p-GaAs(001) interface

Cited by 10 publications

References 17 publications

Passivation of III–V surfaces with crystalline oxidation

Passivation of III–V surfaces with crystalline oxidation

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment

Contact Info

Product

Resources

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Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment