The purpose of this study was to evaluate the oxidative effect in human lymphocytes after acute nickel (Ni) treatment for 1 h; levels of intracellular reactive oxygen species (ROS), lipid peroxidation (LPO) and hydroxyl radicals ((*)OH) were examined in isolated lymphocytes. The potential effects of antioxidants were also examined. After acute treatment, NiCl(2) (0-10 mM) significantly decreased the viability of lymphocytes. NiCl(2) appear to increase the degree of dichlorofluorescein (DCF) fluorescence and the levels of thiobarbituric acid-reactive substances (TBARS) in human lymphocytes in vitro in a concentration-dependent manner. The level of (*)OH was quantified by two main hydroxylated derivates, 2,3- and 2,5-dihydroxybenzate (DHB). Levels of 2,3- and 2,5-DHB were significantly higher in the Ni-treated group than in controls. Catalase partially reduced the NiCl(2)-induced elevation of oxidants and TBARS, whereas superoxide dismutase (SOD) enhanced the level of oxidants and TBARS. Both NiCl(2)-induced fluorescence and LPO were prevented significantly by glutathione (GSH) and mannitol. NiCl(2)-induced increase in generation of (*)OH was prevented significantly by catalase, GSH and mannitol, but not by SOD. These results suggest that NiCl(2)-induced lymphocyte toxicity may be mediated by oxygen radical intermediates, for which the accelerated generation of (*)OH may plays an important role in Ni-induced oxidative damage of human lymphocytes. Catalase, GSH and mannitol each provides protection against the oxidative stress induced by Ni.

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The energy gap of dilute nitride GaAsSbN has been studied. We found that the energy gap reduction induced by nitrogen incorporation is nearly independent of the Sb composition of the alloy, indicating that the conduction band and the valence band can be independently manipulated by incorporating N and Sb, respectively. A “double” band anticrossing (BAC) model, which is a combination of a BAC model for GaAsN and a valence BAC model for GaAsSb with the localized levels and hybridization parameters reported in literatures, has been proposed to fit the energy gap of annealed GaAsSbN samples. The as-grown samples, however, are with lower energy gaps, most likely resulting from the existence of substitutional N pairing and clustering in the alloys.

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Photoemission from an epi Ge(001)-2 × 1 surface is presented using synchrotron radiation as a probe. The topmost surface atoms are buckled with the up-dimer and down-dimer atoms exhibiting surface core-level shifts (SCLSs) of −0.492 and −0.178 eV, respectively. The subsurface layer shows a +0.083 eV SCLS. The final-state effect suffices to explain the sign of the shift. The electron affinity and ionization potential for the epi Ge surface are 4.36 and 5.09 eV, respectively. An argument contrasting the current results with those of existing reports with non-epi surfaces is also given. Non-epi surfaces possess Ge surfaces with isolated single atoms or small droplets that affect Ge’s contact with dielectric layers and the electric performances of the Ge metal–oxide–semiconductor structure.

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