Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

Lin, Kai‐Wei; Wan, Hsien-Wen; Chen, K.H.M.; Fanchiang, Y. T.; Chen, W.S.; Lin, Yan-Ting; Cheng, Yi-Ting; Chen, C.C.; Lin, Hsiu-Li; Young, L.; Cheng, Chia-Ming; Pi, Tun‐Wen; Kwo, J.; Hong, M.

doi:10.1016/j.jcrysgro.2019.02.035

Cited by 20 publications

(13 citation statements)

References 86 publications

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“…The samples were prepared in an integrated UHV growth/analysis system including various semiconductor/oxide/metal MBE chambers, a thermal high-κ oxide ALD reactor, and an XPS chamber . The base pressure of all of the chambers and the transfer modules was maintained at 10 –11 –10 –10 Torr to prevent the sample surfaces from contamination.…”

Section: Methodsmentioning

confidence: 99%

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Chen

Lin

et al. 2023

ACS Appl. Electron. Mater.

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Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low trap densities is the key to high-performance metal−oxide−semiconductor (MOS) devices. Atomic layer deposition (ALD) has been employed in precise thin oxide depositions with relatively low temperatures in the semiconductor device fabrication industry. Herein, we compare the electronic structures of nanometer-thick ALD-Y 2 O 3 on freshly grown GaAs(001)−4 × 6 without and with ultrahigh vacuum (UHV) annealing to 600 °C. In situ X-ray photoelectron spectroscopy (XPS) and in situ synchrotron radiation photoelectron spectroscopy (SRPES) with the best surface sensitivity were utilized to study the samples, whose pristine conditions were preserved under UHV between the growth and the characterization. In the Y 2 O 3 film, the surface Y−OH bonding and the pure As atoms resulting from the ALD process were completely removed with UHV annealing. Additionally, no O deficiency was detected in the resolution limit of XPS, indicating the intactness of the O−Y bonding. The UHV annealing has reduced traps in the Y 2 O 3 film, leading to smaller frequency dispersions in the measured capacitance−voltage (C−V) curves of the MOS capacitors (MOSCAPs). At the same time, the enriched Ga−O−Y bonds effectively passivated the GaAs surface and strongly stabilized the Y 2 O 3 /GaAs interface, resulting in lower interfacial trap density (D it ) values from (2−3) × 10 12 eV −1 cm −2 to (0.7−2) × 10 12 eV −1 cm −2 and maintaining the high-temperature stability. We have elucidated the effects of UHV annealing on the interfacial chemistry and the thin oxide film of the ALD-Y 2 O 3 /GaAs(001)−4 × 6 in an atomic scale, and have correlated the electronic characteristics of the heterostructure with the electrical properties of the MOSCAPs.

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Section: Methodsmentioning

confidence: 99%

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Chen

Lin

et al. 2023

ACS Appl. Electron. Mater.

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“…Sample growth was carried out in a multichamber system consisting of the semiconductor and oxide MBE growth chambers, two atomic layer deposition (ALD) reactors, and an XPS analysis chamber, all connected via UHV of low 10 –10 Torr. This setup enabled the attainment of pristine surfaces and interfaces of the oxide/Si/Ge heterostructures .…”

Section: Methodsmentioning

confidence: 99%

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

Wan

Hong

Cheng

et al. 2021

ACS Appl. Electron. Mater.

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Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 °C, followed by direct deposition of hafnium oxide (HfO2) and aluminum oxide (Al2O3) under ultra-high vacuum. We monitored and studied the Si growth and its epitaxy with the epi-Ge substrate using in-situ reflection high-energy electron diffraction and high-resolution synchrotron radiation X-ray diffraction. Using the gate stacks, we obtained interfacial trap densities of (1–3) × 1011 eV–1 cm–2 without the use of high-pressure hydrogen annealing and a highly reliable Ge p-type metal-oxide semiconductor with a high acceleration factor of 11.

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“…The samples were prepared in a growth/analysis ultra-high vacuum (UHV) multi-chamber system (Designed and constructed by M. Hong, J. Kwo, and the group members, Taiwan, with chambers/parts from various countries.) [ 34 , 35 ]. All of the chambers were connected through UHV modules under ~10 −10 torr to ensure intactness of the pristine surfaces and interfaces during the sample transfers.…”

Section: Methodsmentioning

confidence: 99%

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

et al. 2020

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The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO3 perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al2O3/Y2O3 multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y2O3. This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al2O3 cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A.

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Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

Cited by 20 publications

References 86 publications

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum

Cited by 20 publications

References 86 publications

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation