Single-crystal atomic layer deposited Y2O3 on GaAs(0 0 1) – growth, structural, and electrical characterization

Wu, Su Ying; Chen, K.H.; Lin, Yan-Ting; Cheng, Chia-Ming; Hsu, Chia‐Hung; Kwo, J.; Hong, M.

doi:10.1016/j.mee.2015.04.061

Cited by 20 publications

(22 citation statements)

References 30 publications

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“…We will start with the crystallographic structures of ALD-Y 2 O 3 film 2.3 nm thick on GaAs(001)-4 × 6, and then move to the same oxide of a similar thickness on a different orientation of (111). The former structure was studied earlier [ 35 ]. The XRD radial scan along the surface normal of the former hetero-structure is shown in Figure 3 a, in which the location of the broad peak appearing at the scattering vector along the surface normal q 001 ~ 3.006 r.l.u.…”

Section: Resultsmentioning

confidence: 99%

“…In our very recent work, ALD-Y 2 O 3 2.3 nm thick directly deposited on GaAs(001) was found to be epitaxial, as readily observed using in-situ reflection high energy electron diffraction (RHEED) [ 35 ]. The synchrotron radiation X-ray diffraction (XRD) radial scans along surface normal, rocking curves, azimuthal cone scans across off-specular reflections and crystal truncation rod measurements of ALD-Y 2 O 3 /GaAs(001) have established that the thin Y 2 O 3 is a cubic single crystal with its (110) planes parallel with GaAs(001) surface and the in-plane directions [001] and [

10] parallel with the [110] and [1

0] of GaAs (001) [ 35 ].…”

Section: Introductionmentioning

confidence: 97%

“…The synchrotron radiation X-ray diffraction (XRD) radial scans along surface normal, rocking curves, azimuthal cone scans across off-specular reflections and crystal truncation rod measurements of ALD-Y 2 O 3 /GaAs(001) have established that the thin Y 2 O 3 is a cubic single crystal with its (110) planes parallel with GaAs(001) surface and the in-plane directions [001] and [

\bar{1}

10] parallel with the [110] and [1

\bar{1}

0] of GaAs (001) [35]. The crystallographic structure of ALD-Y 2 O 3 2.3 nm thick is similar to that of single crystal MBE-Gd 2 O 3 epitaxially grown on GaAs(001) which is the key for attaining a low D it for n-GaAs(001) [1,2,10,13].…”

Section: Introductionmentioning

confidence: 99%

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Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

et al. 2015

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Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 × 6 and GaAs(111)A-2 × 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y2O3 films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y2O3(110)[001][true1¯10]//GaAs(001)[110][1true1¯0]. On GaAs(111)A, the Y2O3 films are also of a cubic phase with (111) as the film normal, having the orientation relationship of Y2O3(111)[2true1¯true1¯][01true1¯]//GaAs(111)[true2¯11][0true1¯1]. The relevant orientation for the present/future integrated circuit platform is (001). The ALD-Y2O3/GaAs(001)-4 × 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage (CV) curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit) is low of ~1012 cm−2eV−1 as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the Dit are the lowest ever achieved among all the ALD-oxides on GaAs(001).

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Section: Resultsmentioning

confidence: 99%

10] parallel with the [110] and [1

0] of GaAs (001) [ 35 ].…”

Section: Introductionmentioning

confidence: 97%

\bar{1}

10] parallel with the [110] and [1

\bar{1}

Section: Introductionmentioning

confidence: 99%

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Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

et al. 2015

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“…We specifically selected the system of ALD-Y 2 O 3 on freshly molecular beam epitaxy (MBE)-grown pristine GaAs(001)-4 × 6 because the oxide film orients itself along the surface normal (110), which shows a single-domain single-crystalline cubic phase. , Moreover, the interfacial trap density ( D it ) is low (<10 12 cm –2 eV –1 ), and the D it distribution within the GaAs band gap is flat without a peak bulge in the midgap . A similar 3 + oxide, such as Al 2 O 3 , fails to return with such excellent electric performances. − In situ synchrotron radiation photoelectron spectroscopy (SRPES) was used to study the interfacial electronic structure of the film in sub-ML thickness to bulk.…”

Section: Introductionmentioning

confidence: 99%

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

et al. 2018

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Y 2 O 3 was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt) 3 ] and H 2 O process. The exponential attenuation of Ga 3d photoelectrons confirmed the laminar growth of ALD-Y 2 O 3 . In the embryo stage of the first ALD half-cycle with only Y(CpEt) 3 , the precursors reside on the faulted As atoms and undergo a charge transfer to the bonded As atoms. The subsequent ALD half-cycle of H 2 O molecules removes the bonded As atoms, and the oxygen atoms bond with the underneath Ga atoms. The product of a line of Ga–O–Y bonds stabilizes the Y 2 O 3 films on the GaAs substrate. The resulting coordinatively unsaturated Y–O pairs of Y 2 O 3 open the next ALD series. The absence of Ga 2 O 3 , As 2 O 3 , and As 2 O 5 states may play an important role in the attainment of low interfacial trap densities ( D it ) of <10 12 cm –2 eV –1 in our established reports.

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“…Atomic layer deposition (ALD), having the advantages of self-limiting growth with an atomic accuracy and conformal coverage, has been used in industrial manufacturing, where many ALD films are amorphous oxides. ALD, nonetheless, has produced single-crystal rare-earth oxides on GaAs(001) [ 23 , 24 ], (111)A [ 23 , 25 , 26 ], and GaN [ 27 ]. MBE, a physical vapor deposition method, grows complex structures (including superlattices) by evaporating the constituents at the same time or sequentially.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

et al. 2020

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The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO3 perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al2O3/Y2O3 multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y2O3. This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al2O3 cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A.

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Single-crystal atomic layer deposited Y2O3 on GaAs(0 0 1) – growth, structural, and electrical characterization

Cited by 20 publications

References 30 publications

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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Single-crystal atomic layer deposited Y2O3 on GaAs(0 0 1) – growth, structural, and electrical characterization

Cited by 20 publications

References 30 publications

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

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Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y₂O₃ on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy