Two-Dimensional Materials for Thermal Management Applications

Abstract

With the advances of the electronics industry, the continuing trend of miniaturization and integration imposes challenges of efficient heat removal in nanoelectronic devices. Two-dimensional (2D) materials, especially graphene and hexagonal boron nitride (h-BN), are widely accepted as ideal candidates for thermal management materials due to their high intrinsic thermal conductivity and good mechanical flexibility. In this review, we introduce phonon dynamics of solid materials and thermal measurement methods at nanoscale, and highlight the unique thermal properties of 2D materials in relation to sample thickness, domain size, and interfaces. In addition, we discuss recent achievements of thermal management applications in which 2D materials act as heat spreader and thermal interface materials based on their controlled growth and selfassembly. Finally, critical consideration on the challenges and opportunities in thermal management applications of 2D materials is presented.

Orbitally driven giant thermal conductance associated with abnormal strain dependence in hydrogenated graphene-like borophene

“…In particular, for 2D materials based devices, owing to the atomic thickness, the localized heating in the confined volume is becoming more crucial issue. 7,8 Moreover, understanding of thermal properties also directly relate to important application of 2D materials, including the developments of thermal interface materials, 9,10 thermoelectric energy conversion, 11 and thermal coating materials. 12 Obviously, it is indispensable to understand the fundamental principles, and then improve the ability for manipulating thermal properties of 2D materials, which topic has attracted tremendous attention in recent years.…”

Novel Poly(m‐phenyleneisophthalamide) Dielectric Composites with Enhanced Thermal Conductivity and Breakdown Strength Utilizing Functionalized Boron Nitride Nanosheets

“…In order to maintain performance and reliability of electronic devices, it is of great importance for the heat generated by billions of tiny transistors during operation to be efficiently dissipated as soon as possible. Consequently, manufacturing electronic packaging or supporting materials with high thermal conductivities to cool down electronic devices is an essential prerequisite …”

Energy Dissipation in Black Phosphorus Heterostructured Devices

“…Removal of excessive heat is one of the key challenges for continuing progress in the high‐frequency electronic devices. The shrinking transistor feature size and corresponding increasingly power density are leading to excessive generation of self‐heat in high performance integrated circuits and systems . This problem is expected to be much more severe in future miniaturized devices and circuits based on low dimensional materials due to alteration in phonon dispersion induced by quantum confinement effects and, enhanced phonon‐boundary interactions facilitated by large surface‐to‐volume ratio .…”

“…Similarly, semiconducting 2D materials such as BP, MoS 2 , and WSe 2 exhibit smaller thermal conductivities (<100 W m −1 K −1 ) at room temperature, suffering from an early self‐heating induced breakdown at moderate operating field conditions . By identifying the spatial position of hotspots and the corresponding thermal spreading direction in a thermally resistive channel and integrating it with highly thermally conductive layered materials such as insulating hBN (360 W m −1 K −1 ) and semimetallic graphene (5300 W m −1 K −1 ), one can effectively avoid the premature Joule breakdown of devices . It is therefore possible to design thermally favorable van‐der Waals heterostructures, in which, heat can be efficiently dissipated from a thermal resistive channel such as semiconducting BP under practical operating conditions.…”