Energy Dissipation in Black Phosphorus Heterostructured Devices

Abstract

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/admi.201801528. Black PhosphorusRemoval of excessive heat is one of the key challenges for continuing progress in the high-frequency electronic devices. The shrinking transistor feature size and corresponding increasingly power density are leading to excessive generation of selfheat in high performance integrated circuits and systems. [1,2] This problem is expected to be much more severe in future miniaturized devices and circuits based on low dimensional materials due to alteration in phonon dispersion induced by quantum confinement effects and, enhanced phonon-boundary

High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2

“…The relationship between V D and Raman shifts can be seen clearly in Figure 5d. The tri‐layer MoTe 2 gave rise to the red‐shift of Raman peak of 1.7 cm −1 for A 1g mode and 3.0 cm −1 for and modes, more than at V G of 0 and +80 V (Figure S3, Supporting Information), indicating that Joule heating is more effective at V G = −80 V. The Raman peaks of MoTe 2 redshift because V D increases the temperature of MoTe 2 by Joule heating 11,14,27. Interestingly, the tri‐layer MoTe 2 exhibited the 1T′ phase at the Raman peak of 124 cm −1 (Figure 5e).…”

“…As high performance and low power devices are more in need to meet the harsh requirements of the emerging mobile and Internet of Things (IoT) environment, it becomes clear that energy dissipation and electrical breakdown are formidable challenges, toward the realization of further miniaturization and functionalized integration of 2D electronics 7–12. Power dissipation in 2D materials, including graphene, black phosphorus, and other TMDCs, has been studied by Raman spectroscopy under the high electrical fields applied to the FET structure 11,13–16. To the best of our knowledge, the power dissipation and electrical breakdown of molybdenum ditelluride (MoTe 2 ) have not been studied intensively, although it is one of the most promising TMDCs that can be employed for future 2D device applications requiring ambipolar semiconducting properties 17–20.…”

“…The simultaneous measurement of electrical currents and Raman shifts on 2D materials enables to reveal the temperature profile of 2D materials induced by the Joule heating. It is obviously important to examine the energy dissipation of 2D electronics and the thermal state on their surface under electrical biasing 11,13–16. In this work, we investigated the electrical breakdown and phase transition of MoTe 2 , and examined the effects of voltage and temperature on Raman shifts from various thickness MoTe 2 transistors.…”

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including graphene, black phosphorus, and other TMDCs, has been studied by Raman spectroscopy under the high electrical fields applied to the FET structure. [11,[13][14][15][16] To the best of our knowledge, the power dissipation and electrical breakdown of molybdenum ditelluride (MoTe 2 ) have not been studied intensively, although it is one of the most promising TMDCs that can be employed for future 2D device applications requiring ambipolar semiconducting properties. [17][18][19][20] MoTe 2 is known to have a 2H semiconducting phase with the thickness dependent band gap in the range from 0.83 to 1.1 eV.

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“…It is obviously important to examine the energy dissipation of 2D electronics and the thermal state on their surface under electrical biasing. [11,[13][14][15][16] In this work, we investigated the electrical breakdown and phase transition of MoTe 2 , and examined the effects of voltage and temperature on Raman shifts from various thickness MoTe 2 transistors. Interestingly, MoTe 2 seems to show an unusual electrical breakdown, perhaps related to the phase transition.…”