Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 106, which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 104 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory.

Embedding non-hexagonal rings into sp2-hybridized carbon networks is considered a promising strategy to enrich the family of low-dimensional graphenic structures. However, non-hexagonal rings are energetically unstable compared to the hexagonal counterparts, making it challenging to embed non-hexagonal rings into carbon-based nanostructures in a controllable manner. Here, we report an on-surface synthesis of graphene-like nanoribbons with periodically embedded four- and eight-membered rings. The scanning tunnelling microscopy and atomic force microscopy study revealed that four- and eight-membered rings are formed between adjacent perylene backbones with a planar configuration. The non-hexagonal rings as a topological modification markedly change the electronic properties of the nanoribbons. The highest occupied and lowest unoccupied ribbon states are mainly distributed around the eight- and four-membered rings, respectively. The realization of graphene-like nanoribbons comprising non-hexagonal rings demonstrates a controllable route to fabricate non-hexagonal rings in nanoribbons and makes it possible to unveil their unique properties induced by non-hexagonal rings.

This review outlines the semiconducting-(quasi)metallic phase transition of 2D-TMDs and discusses current developments in the application of this unique phase. Challenges and future developmental trends of TMD-based systems are also highlighted.

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This paper describes a new software-based registration and fusion of visible and thermal infrared (IR) image data for face recognition in challenging operating environments that involve illumination variations. The combined use of visible and thermal IR imaging sensors offers a viable means for improving the performance of face recognition techniques based on a single imaging modality. Despite successes in indoor access control applications, imaging in the visible spectrum demonstrates difficulties in recognizing the faces in varying illumination conditions. Thermal IR sensors measure energy radiations from the object, which is less sensitive to illumination changes, and are even operable in darkness. However, thermal images do not provide high-resolution data. Data fusion of visible and thermal images can produce face images robust to illumination variations. However, thermal face images with eyeglasses may fail to provide useful information around the eyes since glass blocks a large portion of thermal energy. In this paper, eyeglass regions are detected using an ellipse fitting method, and replaced with eye template patterns to preserve the details useful for face recognition in the fused image. Software registration of images replaces a special-purpose imaging sensor assembly and produces co-registered image pairs at a reasonable cost for large-scale deployment. Face recognition techniques using visible, thermal IR, and data-fused visiblethermal images are compared using a commercial face recognition software (FaceIt R ) and two visible-thermal face image databases (the NIST/Equinox and the UTK-IRIS databases). The proposed multiscale data-fusion technique improved the recognition accuracy under a wide range of illumination changes. Experimental results showed that the eyeglass replacement increased the number of correct first match subjects by 85% (NIST/Equinox) and 67% (UTK-IRIS).Keywords: face recognition, visible-thermal image fusion, multisensor image registration, thermal infrared imaging, eyeglass replacement, personal identification, security 216 Kong et al.

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2D transition‐metal dichalcogenide (TMD)‐based electronic devices have been extensively explored toward the post‐Moore era. Huge efforts have been devoted to modulating the doping profile of TMDs to achieve 2D p–n junctions and inverters, the fundamental units in logic circuits. Here, photoinduced nonvolatile and programmable electron doping in MoTe2 based on a heterostructure of MoTe2 and hexagonal boron nitride (BN) is reported. The electron transport property in the MoTe2 device can be precisely controlled by modulating the magnitude of the photodoping gate exerted on BN. Through tuning the polarity of the photodoping gate exerted on BN under illumination, such a doping effect in MoTe2 can be programmed with excellent repeatability and is retained for over 14 d in the absence of an external perturbation. By spatially controlling the photodoping region in MoTe2, a photoresist‐free p–n junction and inverter in the MoTe2 homostructure are achieved. The MoTe2 diode exhibits a near‐unity ideality factor of ≈1.13 with a rectification ratio of ≈1.7 × 104. Moreover, the gain of the MoTe2 inverter reaches ≈98, which is among the highest values for 2D‐material‐based homoinverters. These findings promise photodoping as an effective method to achieve 2D‐TMDs‐based nonvolatile and programmable complementary electronic devices.

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