Graphene has attracted large interest in photonic applications owing to its promising optical properties, especially its ability to absorb light over a broad wavelength range, which has lead to several studies on pure monolayer graphene-based photodetectors. However, the maximum responsivity of these photodetectors is below 10 mA W À 1 , which significantly limits their potential for applications. Here we report high photoresponsivity (with high photoconductive gain) of 8.61 A W À 1 in pure monolayer graphene photodetectors, about three orders of magnitude higher than those reported in the literature, by introducing electron trapping centres and by creating a bandgap in graphene through band structure engineering. In addition, broadband photoresponse with high photoresponsivity from the visible to the mid-infrared is experimentally demonstrated. To the best of our knowledge, this work demonstrates the broadest photoresponse with high photoresponsivity from pure monolayer graphene photodetectors, proving the potential of graphene as a promising material for efficient optoelectronic devices.

Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 106, which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 104 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory.

Dispersion and spatial distribution of graphene sheets play crucial roles in tailoring mechanical and functional properties of their polymer composites. Anisotropic graphene aerogels (AGAs) with highly aligned graphene networks are prepared by a directional-freezing followed by freeze-drying process and exhibit different microstructures and performances along the axial (freezing direction) and radial (perpendicular to the axial direction) directions. Thermal annealing at 1300 °C significantly enhances the quality of both AGAs and conventional graphene aerogels (GAs). The aligned graphene/epoxy composites show highly anisotropic mechanical and electrical properties and excellent electromagnetic interference (EMI) shielding efficiencies at very low graphene loadings. Compared to the epoxy composite with 0.8 wt % thermally annealed GAs (TGAs) with an EMI shielding effectiveness of 27 dB, the aligned graphene/epoxy composite with 0.8 wt % thermally treated AGAs (TAGAs) has an enhanced EMI shielding effectiveness of 32 dB along the radial direction with a slightly decreased shielding effectiveness of 25 dB along the axial direction. With 0.2 wt % TAGA, its epoxy composite exhibits a shielding effectiveness of 25 dB along the radial direction, which meets the requirement of ∼20 dB for practical EMI shielding applications.

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The predominant synergic effect of GQDs and SrRuO3CEs drives faster ion diffusions and electron transfer, thereby contributing to excellent catalytic activity of the SRO–GQD CE towards I3−reduction.