Tunnel Diodes

Electronic transport of molecular systems

“…Through the use of NDR devices, circuits with complicated functions can be implemented with significantly fewer components [12][13][14][15][16][17]. There are various NDR devices such as Esaki tunnel diode [5], Gunn effect diode [6], resonant tunneling diode [7], etc., caused by various physical mechanisms.…”

Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits

“…1 has been determined by RF measurements [20] and is approximately C RTD = 3.75 fFµm −2 . This results in a speed index of S = 167.5 V ns −1 which is an appropriate value for high speed RTD based logic families [19]. The relatively high peak voltages of V p ≥ 0.7 V might be a drawback of these diodes for some applications in digital logic elements.…”

“…The speed index S is a figure of merit for the large signal behaviour of a RTD in a digital circuit [19] and can be calculated from…”

Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

“…Low-temperature molecular beam epitaxy (LTMBE) has produced highly doped silicon and silicon-germanium tunnel diodes of the p-n junction Esaki-type, and interband tunneling diodes with delta-doped layers [3]- [6]. Epitaxial diodes are anticipated to be compatible with integrated circuits, unlike the discrete metal-alloyed tunnel diodes that have been commercially available for decades [7]. The Si Esaki diode is especially promising for rapid integration, since it requires no SiGe epitaxy or thick SiGe relaxed buffer layers that are required for the more sophisticated Si/SiGe electron resonant tunneling diodes (RTDs) [8].…”