Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

Dashiell, M. W.; Kolodzey, J.; Crozat, P.; Aniel, F.; Lourtioz, J.‐M.

doi:10.1109/led.2002.1004234

Cited by 21 publications

(7 citation statements)

References 11 publications

(17 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Negative differential resistance (NDR) devices are electronic components with nonohmic current–voltage characteristics and are used in a wide array of applications including frequency multipliers, memory, fast switches, and most importantly, high-frequency oscillators up to the THz range. Conventional NDR devices such as Esaki diodes, Gunn diodes, or molecular devices are two-terminal devices, and their operation principles are based on either quantum tunneling or intervalley carrier transfer. − While graphene NDR devices have been proposed using nanoribbons or p–n junctions in bilayer grapene, , demonstration of such effects in graphene-based devices remains elusive due to the difficulties in meeting the stringent operating conditions experimentally.…”

mentioning

confidence: 99%

Three-Terminal Graphene Negative Differential Resistance Devices

et al. 2012

View full text Add to dashboard Cite

A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene devices based on a field-effect transistor configuration. This NDR effect is a universal phenomenon for graphene and is demonstrated in devices fabricated with different types of graphene materials and gate dielectrics. Operation of conventional NDR devices is usually based on quantum tunneling or intervalley carrier transfer, whereas the NDR behavior observed here is unique to the ambipolar behavior of zero-bandgap graphene and is associated with the competition between electron and hole conduction as the drain bias increases. These three terminal graphene NDR devices offer more operation flexibility than conventional two-terminal devices based on tunnel diodes, Gunn diodes, or molecular devices, and open up new opportunities for graphene in microwave to terahertz applications.

show abstract

mentioning

confidence: 99%

Three-Terminal Graphene Negative Differential Resistance Devices

et al. 2012

View full text Add to dashboard Cite

show abstract

“…The most striking feature of the measured PCs in Fig. 2a is the presence of NDR in the PC- V curves, i.e., typical behaviors of resonant-tunneling diodes (RTDs) 21 22 38 . The NDR characteristics depend strongly on T as well as d .…”

Section: Resultsmentioning

confidence: 99%

“…Negative differential resistance (NDR) has a long history as one of the important tunneling phenomena not only under dark 20 21 22 23 but also under illumination 24 25 26 , and has enabled novel applications in a wide range of electronic devices 27 28 29 30 . The NDR behaviors have been also theoretically predicted in graphene 31 32 , and experimentally observed in several graphene-based device structures such as heterojunction tunneling transistors 33 , p-n tunneling diodes 15 , field effect transistors 34 35 , prompted by the unique two-dimensional properties of graphene at the nanoscale.…”

mentioning

confidence: 99%

Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

Lee

Jang

Shin

et al. 2016

Sci Rep

View full text Add to dashboard Cite

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further studied to fully understand its mechanism, useful for practical device applications. Especially, there has been no observation about light-induced NDR (LNDR) in graphene-related structures despite very few reports on the LNDR in GaAs-based heterostructures. Here, we report first observation of LNDR in graphene/Si quantum dots-embedded SiO2 (SQDs:SiO2) multilayers (MLs) tunneling diodes. The LNDR strongly depends on temperature (T) as well as on SQD size, and the T dependence is consistent with photocurrent (PC)-decay behaviors. With increasing light power, the PC-voltage curves are more structured with peak-to-valley ratios over 2 at room temperature. The physical mechanism of the LNDR, governed by resonant tunneling of charge carriers through the minibands formed across the graphene/SQDs:SiO2 MLs and by their nonresonant phonon-assisted tunneling, is discussed based on theoretical considerations.

show abstract

“…This performance is superior to previously reported results for ORTD. [3,7] The maximum oscillation frequency of this ORTD from its I-V characteristic in NDC region can be estimated from Equation (1) [10] f…”

Section: Performance Of Hybrid Ag Np/organic Devicesmentioning

confidence: 99%

Hybrid Nanoparticle/Organic Devices with Strong Resonant Tunneling Behaviors

Zheng

Choy

Sun

2009

Adv Funct Materials

View full text Add to dashboard Cite

A hybrid nanoparticle/organic device consisting of small molecule organic semiconductors and Ag nanoparticles is reported. The single device exhibits unusual properties of organic resonant tunneling diode (ORTD) at low driving voltage region and offers light emission at high voltage. For ORTD, a strong negative differential resistance behavior is demonstrated at room temperature. The current resonance with the peak‐to‐valley current ratio of over 4.6 and narrow linewidth of only ∼1.4 V is achieved. A detailed operating mechanism of the charging and emission modes is proposed, which can be discussed in terms of the strong charge‐trapping effect of Ag nanoparticles. The repeatable operations of hybrid device show the mutual influences between two modes and the light emission properties of the ORTD are also discussed.

show abstract

Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

Cited by 21 publications

References 11 publications

Three-Terminal Graphene Negative Differential Resistance Devices

Three-Terminal Graphene Negative Differential Resistance Devices

Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

Hybrid Nanoparticle/Organic Devices with Strong Resonant Tunneling Behaviors

Contact Info

Product

Resources

About