Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits

Malindretos, J.; Förster, A.; Indlekofer, K. M.; Lepsa, Mihail Ion; Hardtdegen, H.; Schmidt, Roland; Lüth, H.

doi:10.1006/spmi.2002.1050

Cited by 1 publication

(1 citation statement)

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“…Jijun et al analyzed the piezoelectric effects in RTDs based on GaAs/In

As/AlAs for potential applications in micromachined mechanical sensors, obtaining the result that the piezoresistive sensitivity of RTDs can be adjusted through the bias voltage [ 32 ]. Due to their particular NDR behavior, these systems are excellent candidates for applications to nanoelectronics; in this sense, Malindretos et al grew a GaAs/AlAs RTD by means of a molecular beam epitaxy; their results are satisfactory and of good precision to fabricate RTDs suitable for application in robust digital logic circuits [ 33 ]. Among all the applications of this type of system, it is worth highlighting applications in detector devices that can filter in a varied range of frequencies by simply modifying geometric or material parameters.…”

Section: Introductionmentioning

confidence: 99%

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

et al. 2022

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Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect of donor density and external potentials in a self-consistent way. The calculation method uses the finite-element approach and the Landauer formalism. Quasi-stationary states, transmission probability, current density, cut-off frequency, and conductance are discussed considering variations in the donor density and the width of the central well. For all arrangements, the appearance of negative differential resistance (NDR) is evident, which is a fundamental characteristic of practical applications in devices. Finally, a comparison of the simulation with an experimental double-barrier system based on InGaAs with AlAs barriers reported in the literature has been obtained, evidencing the position and magnitude of the resonance peak in the current correctly.

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“…Jijun et al analyzed the piezoelectric effects in RTDs based on GaAs/In

Section: Introductionmentioning

confidence: 99%