Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

Gil-Corrales, John A.; Vinasco, J.A.; Morales, A. L.; Duque, C.A.

doi:10.3390/nano12101714

Cited by 8 publications

(3 citation statements)

References 51 publications

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“…Let us consider the main equations of the combined self-consistent model of current transport in heterostructures with transverse transport [ 15 , 16 , 17 , 18 ], which is based on the formalism of envelope wave functions, which are solutions of the Schrödinger equation for an open system. The advantages of this model are its high level of validation at the initial part of the RTD I-V curve and its high degree of elaboration, which make it a suitable “verification basis” for building a compact model.…”

Section: Modeling Methodologymentioning

confidence: 99%

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Vetrova,

Kuimov,

Sinyakin

et al. 2023

Sensors

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This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.

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Section: Modeling Methodologymentioning

confidence: 99%

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Vetrova,

Kuimov,

Sinyakin

et al. 2023

Sensors

View full text Add to dashboard Cite

show abstract

“…In contrast, when the device works in other regions, it can be used for the detection of terahertz signals [18]. Several reports are giving out the functional relationship between the current of the device and the transmission coefficient based on the double barrier structure, which can explain the experiment results partly [19,20]. Therefore, according to the applicable requirements, our work can be a reference when analyzing the function of this kind of device.…”

Section: Possible Applicationmentioning

confidence: 98%

Analysis of the influencing factors of transmission coefficients based on ZnSe/BeTe heterojunction

2024

J. Phys.: Conf. Ser.

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As a classic model, the multiple potential barrier structure has been widely studied in the last decades. In this work, we investigate the transmission coefficient of electron tunneling through multiple quantum walls based on ZnSe/BeTe heterojunction. At first, based on the one-dimensional stationary Schrödinger equation and its boundary condition, the equation set is set up. Then, by using the matrix method, the transmission coefficient can be solved by Matlab. The relationship of the transmission coefficient to the energy of the electron, the width of the well, the width of the barrier, the number of barriers, and the potential barrier are simulated. According to the analysis, some phenomena like gap region and miniband can be observed. The number of resonance states in minibands increases when the number of barriers increases while the zones of minibands approximately remain unchanged. This work can be the guide to designing multiple potential barrier nanostructures.

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“…Due to the special structure of the double potential barrier, a potential well is also formed between the two barriers, resulting in resonance tunneling effects in the double potential barrier structure. At present, many research teams have conducted theoretical research on the resonance tunneling effect under this structure, constructed many specific barrier models, and adopted different calculation methods [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Simulation Analysis of Factors Affecting the Quantum Tunneling Effect in 1D Double Potential Barriers Structures

Liu

2024

HSET

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The working principle of a large number of modern scientific equipment has been applied to the quantum tunneling effect. Although the explanations for the relevant principles of this effect are clarified, the calculation process is very complex and difficult to understand. Previous studies combine specific applications without theoretical model references. This study adopts the method of using the time-independent Schrodinger equation to solve the wave function, which is more convenient to obtain the expression of transmission probability. Then, one discusses the relationship between transmission probability and potential barrier width, potential barrier spacing, and incident particle energy. The experimental results show that the transmission probability decreases exponentially from 1 to 0 as the potential barrier width gradually increases. As the potential barrier width increases, the transmission probability exhibits a clear periodic oscillation relationship, the oscillation period remains unchanged, and this paper derives the relationship between the oscillation period and the potential barrier width. As the incident energy of particles gradually increases, the transmission probability exhibits periodic changes, and the minimum value of transmission probability increases with the periodic changes. Based on the analysis, the smaller the potential barrier width, the greater the incident energy, and the more likely quantum tunneling occurs.

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Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

Cited by 8 publications

References 51 publications

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Analysis of the influencing factors of transmission coefficients based on ZnSe/BeTe heterojunction

Simulation Analysis of Factors Affecting the Quantum Tunneling Effect in 1D Double Potential Barriers Structures

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