The contributions of interface roughness scattering and polar optical phonon scattering to the valley current of In 0.53 Ga 0.47 As/AlAs/InAs resonant tunnelling diodes (RTDs) are theoretically found to be comparable. An In 0.53 Ga 0.47 As/AlAs/InAs RTD design is suggested to experimentally observe the phonon peak which has never been observed in this material system. Such a device will provide a calibration point for the theoretical calculations.
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