Transfer-printed stacked nanomembrane lasers on silicon

Yang, Hongjun; Zhao, Ding; Chuwongin, Santhad; Seo, Jung‐Hun; Yang, Weiquan; Shuai, Yichen; Berggren, Jesper; Hammar, Mattias; Ma, Zhenqiang; Zhou, Weidong

doi:10.1038/nphoton.2012.160

Cited by 201 publications

(160 citation statements)

References 34 publications

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“…The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range [15][16][17] . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively. Hence, a laser source made of a direct bandgap group IV material would further boost lab-on-a-chip and trace gas sensing 15 as well as optical interconnects 18 by enabling monolithic integration.…”

Section: Direct Bandgap Group IV Materials May Thus Represent a Pathwmentioning

confidence: 99%

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Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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Direct bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and CMOS technology.Although a group IV direct bandgap material has not been demonstrated yet, silicon photonics using CMOS-compatible processes has made great progress through the development of Si-based waveguides 12 , photodetectors 13 and modulators 14 . The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range 15-17 . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively. Hence, a laser source made of a direct bandgap group IV material would further boost lab-on-a-chip and trace gas sensing 15 as well as optical interconnects 18 by enabling monolithic integration. In this context, Ge plays a prominent role since the conduction band minimum at the -point of the Brillouin-zone (referred to as -valley) is 3 located only approx. 140 meV above the fourfold degenerate indirect L-valley. To compensate for this energy difference and thus form a laser gain medium, heavy n-type doping of slightly tensile strained Ge has been proposed 19 . Later, laser action has been reported for optically 20 and electrically pumped Ge 21 doped to approx. 1 and 4×10 19 cm -3 , respectively. However, pump-probe measurements of similarly doped and strained material did not show evidence for net gain 22 , and in spite of numerous attempts, researchers failed to substantiate above results up to today. Other investigated concepts concern the engineering of the Ge band structure towards a direct bandgap semiconductor using micromechanicallystressed Ge nanomembranes 9 or silicon nitride (Si 3 N 4 ) stressor layers 23 . Very recently, Süess et al. 10 presented a stressor-free technique which enables the introduction of more than 5.7 % 24 uniaxial tensile strain in Ge µ-bridges via selective wet under-etching of a pre-stressedlayer. An alternative technique in order to achieve direct bandgap material is to incorporate Sn atoms into a Ge lattice, which primarily reduces the gap at the -point. At a sufficiently high fraction of Sn, the energy of the -valley decreases below that of the L-valley. This indirect-to-direct transition for relaxed GeSn binaries has been predicted to occur at about 20 % Sn by Jenkins et al. 25 , but more recent calculations indicate much lower required Sn concentrations in the range of 6.5-11.0 % 26,27 . A major challenge for the realization of such GeSn alloys is the low (< 1 %) equilibrium solubility of Sn in Ge 28 and the large lattice mismatch of about 15 % between Ge and -Sn. For GeSn grown on Ge substrates, this mismatch induces biaxial compressive strain causing a shift of the  and L-valley crossover towards higher Sn concentrations ...

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Section: Direct Bandgap Group IV Materials May Thus Represent a Pathwmentioning

confidence: 99%

“…In order to overcome this drawback, several routes have been followed, such as the all-optical Si Raman laser 2 or the heterogeneous integration of direct bandgap III-V lasers on Si [3][4][5][6][7] . Here, we report on lasing in a direct bandgap group IV system created by alloying Ge with Sn 8 without mechanically introducing strain 9,10 .…”

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confidence: 99%

Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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“…Furthermore, the wavelength tunability is demonstrated by different PC lattice designs to shift the reflection spectrum towards the target wavelength (Figure 3b). (ii) T = 50 K; (iii) T = 120 K; (iv) T = 300 K. Portions of measured top (Rt, dash lines) and bottom (Rb, solid lines) reflection spectra are also shown for both LT and RT designs (reprinted from [12]). …”

Section: Semiconductor Nm-based Light-emitting Devicesmentioning

confidence: 99%

“…To compare the effect of different coupling strengths on lasing performance, two devices with different spacing between MQWs and Si-PC (0 and 130 nm) are fabricated, named PCSEL-I and PCSEL-II. The SEM (ii) T = 50 K; (iii) T = 120 K; (iv) T = 300 K. Portions of measured top (R t , dash lines) and bottom (R b , solid lines) reflection spectra are also shown for both LT and RT designs (reprinted from [12]). …”

Section: Photonic Crystal Surface-emitting Lasermentioning

confidence: 99%

“…In recent years, the impressive progress of NM transfer and stacked NMs in photonic applications has been implemented; one main research focus is integrating III-V material or efficient light-absorbing material onto silicon substrate for silicon photonics applications, including a vertical cavity laser with two Si photonic crystal (PC) mirrors [12], first-order diffraction-based surface emitting lasers with a Si PC pattern [30], an edge-emitting laser on Si substrate [38], multi-color photodetectors [39] and a cavity-enhanced Ge photodetector on a silicon on insulator (SOI) substrate [40]. The other is to take advantage of the flexible mechanical property to realize bendable phototransistors and photodetectors [25,[41][42][43] and light-emitting diodes (LEDs) [44] by transfer printing a very thin membrane layer onto a plastic substrate.…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

Liu

Zhou

2016

Photonics

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Abstract:Heterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emitting structures, flexible light-emitting diode, photodetectors at visible and infrared wavelengths, as well as flexible photodetectors, are reviewed to demonstrate that the transfer-printed semiconductor nanomembrane stacked layers have a large variety of applications in integrated optoelectronic systems.

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Silicon Photonics

Thomson

Littlejohns

Stanković

et al. 2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Silicon photonics is a vibrant technology area in which photonic integrated circuits and components are made of silicon. The main driving force behind its development is the prospect of low‐cost manufacture. This is possible due to its compatibility with CMOS processing techniques, which lead to high volumes and high yield. In recent years, there has been a vast and growing amount of research into the technology from both academia and industry, and this has coincided with a period of rapid performance enhancements of the different building block elements that make up a photonic integrated circuit as well as integration and fabrication techniques. In this article an overview of silicon photonics is provided, with the progress in each of the building block areas described, from passive wave guiding components to light sources, optical modulators, and photodetectors. We also give a short overview of the different integration techniques used in the field and the rapidly growing area of mid‐infrared silicon photonic technology.

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Transfer-printed stacked nanomembrane lasers on silicon

Cited by 201 publications

References 34 publications

Lasing in direct-bandgap GeSn alloy grown on Si

Lasing in direct-bandgap GeSn alloy grown on Si

Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

Silicon Photonics

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