Silicon Photonics

Thomson, David J.; Littlejohns, Callum G.; Stanković, S.; Nedeljkovic, Milos; Reynolds, Scott A.

doi:10.1002/047134608x.w8287

Cited by 5 publications

(4 citation statements)

References 167 publications

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“…Silicon photonics has for a long time attracted a substantial amount of attention due to its versatility, large optical transparency, low cost, and compatibility with complementary metal-oxide-semiconductor technologies for large-area mass production [1][2][3]. The heteroepitaxial growth of germaniumon-silicon (Ge/Si) is able to serve as a virtual substrate for further epitaxial growth of group IV and III-V active and passive photonic devices for silicon photonics.…”

Section: Introductionmentioning

confidence: 99%

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Mtunzi,

Jia,

Hou

et al. 2024

J. Phys. D: Appl. Phys.

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High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III-V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder the motion of defects. In this work, we demonstrate the effectiveness of an optimised two-step growth recipe structure on a (111)-faceted V-groove silicon substrate with a 350 nm flat ridge. This strategy succesfully reduces the threading dislocation density while growing a 1 µm Ge buffer layer via molecular beam epitaxy. As a result, a high-quality buffer is produced with a low threading dislocation density on the order of 107 cm-2 and a surface roughness below 1 nm.

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Section: Introductionmentioning

confidence: 99%

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Mtunzi,

Jia,

Hou

et al. 2024

J. Phys. D: Appl. Phys.

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“…Silicon photonics is the manipulation of light (photons) in Si based substrates in a comparable manner to electronics is the manipulation of electrons in Si based substrates [1,2]. Using light to transfer and manipulate data has many key advantages, most notably bandwidth and power.…”

Section: Introductionmentioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

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The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

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“…Whilst great improvements have been achieved in integrating photonics and electronics (1), there is a constant demand for improved interconnect power consumption and bandwidth density. In order to decrease further the dimension and power consumption of devices such as modulators, CMOS compatible materials such as SiGe can be used (2).…”

Section: Introductionmentioning

confidence: 99%

SiGe Bandgap Tuning for High Speed Eam

et al. 2017

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We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.

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Silicon Photonics

Cited by 5 publications

References 167 publications

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

SiGe Bandgap Tuning for High Speed Eam

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