In this paper, we report on theoretical investigation of split mode resonant sensors based on fiber Bragg grating (FBG) ring resonators and π-shifted fiber Bragg grating (π-FBG) ring resonators. By using a π-shifted Bragg grating ring resonator (π-FBGRR) instead of a conventional fiber Bragg grating ring resonator (FBGRR), the symmetric and antisymmetric resonance branches (i.e., the eigen-modes of the perturbed system) show peculiar and very important features that can be exploited to improve the performance of the fiber optic spectroscopic sensors. In particular, the π-FBGRR symmetric resonance branch can be taylored to have a maximum splitting sensitivity to small environmental perturbations. This optimal condition has been found around the crossing points of the two asymmetric resonance branches, by properly choosing the physical parameters of the system. Then, high sensitivity splitting mode sensors are theoretically demonstrated showing, as an example, a strain sensitivity improvement of at least one order of magnitude over the state-of-the-art.
The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
We report mid-infrared Ge-on-Si waveguide based PIN diode modulators operating at wavelengths of 3.8 μm and 8 μm. Fabricated 1 mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1 mm-long Mach-Zehnder modulator has a V π •L of 0.47 V•cm. Driven by a 2.5 V pp RF signal, 60 MHz On-Off Keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
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