Traction inverter that applies compact 3.3 kV / 1200 A SiC hybrid module

Ishikawa, Katsumi; Ogawa, Kazutoshi; Yukutake, S.; Kameshiro, Norifumi; Kono, Yohei

doi:10.1109/ipec.2014.6869884

Cited by 32 publications

(26 citation statements)

References 4 publications

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“…Vgsp must also be higher than SiC-MOSFET Miller voltage Vml. Thus, the maximum limit of Csp is calculated in (15). Gate discharging turn-off time constant for the proposed gate driver should exhibit a similar value with that of the conventional gate driver as expressed in (16), where Rgoff' is the turn-off gate resistor for the conventional gate driver as shown in Fig.…”

Section: Proposed Gate Driver Design Methodsmentioning

confidence: 99%

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Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

et al. 2018

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This paper presents a high-speed, low loss, and low noise gate driver for silicon-carbide (SiC) MOSFETs. We propose a gate boost circuit to reduce the switching loss and delay time without increasing the switching noise. The proposed gate driver enables converter-level efficiency improvements or power density enhancements. SiC MOSFETs have attracted significant interest as the next generation power devices. In general, the switching performance of power devices exhibits a trade-off between switching loss and noise. SiC-MOSFETs are expected to switch faster than Silicon IGBTs; however, faster switching might cause switching noise problems such as unwanted electromagnetic interferences (EMI). In this paper, we propose a gate driver topology that improves the switching performance of SiC-MOSFETs, and confirm the reduction in switching loss and delay time through experimental results.

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Section: Proposed Gate Driver Design Methodsmentioning

confidence: 99%

“…The soft gate method also applies to hybrid SiC devices, as shown in (15). A dV/dt control method is proposed for SiC-JFET with cascode silicon MOSFETs in (16).…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

et al. 2018

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“…Therefore, the switching sequence resulting from CB-SPWM is symmetrical, as shown in Figure 4a. It is similar to the space vector PWM (SVPWM) in a three-phase PWM inverter, and either of two effective voltage vectors (01) and (10) is located symmetrically between two zero voltage vectors (00) and (11) in one switching sequence. Exact duration times for those effective and zero vectors are determined to satisfy the magnitude of Vc* on average during the single switching period Ts.…”

Section: Conventional Carrier-based Sinusoidal Pulse-width Modulationmentioning

confidence: 99%

“…In the case of railway vehicles, the application of multi-level power systems has not yet become commonplace in the market because it is important to design the propulsion system to be as simple and robust as possible for the system reliability, safety of passengers, overall system cost, and maintenance convenience. On the other hand, a propulsion system using Silicon Carbide (SiC)-IGBT has been reported due to the recent development of power devices [11,12]. SiC-IGBT shows improved characteristics including fast switching dynamics, high breakdown voltage, low switching losses, and high thermal capacity over Si-IGBT.…”

Section: Introductionmentioning

confidence: 99%

± 180° Discontinuous PWM for Single-Phase PWM Converter of High-Speed Railway Propulsion System

2020

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As high-capacity alternating current/direct current (ac/dc) power conversion systems, single-phase pulse-width modulation (PWM) converters used in high-speed railway propulsion systems adopt high-voltage Insulated-Gate Bipolar Transistors (IGBTs) as switching elements. Due to their high breakdown voltage characteristics, the switching dynamics are inferior to those of low-voltage IGBTs and switching losses are more dominant than conduction losses despite operating at relatively low switching frequencies of hundreds to several kHz. To solve this problem, this paper proposes ± 180° discontinuous PWM (DPWM) suitable for a single-phase circuit. With the simple addition of offset voltages, the proposed DPWM method can be implemented easily and switching losses can be reduced by half by clamping the switching legs of the H-bridge converter to the positive or negative dc rail during every half cycle. In addition, temperature deviation between the power stacks can be minimized by using selective application of clamping modes. The validity and effectiveness of the proposed DPWM are verified through simulations and experiments of a prototype converter.

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“…As a result, it makes more sense to build hybrid systems. Also at present, hybrid approach strikes a good balance between cost and efficiency achieved by these modules [24][25][26][27]. Also, it is worthwhile to point out that although SiC diodes and MOSFETs are available at 1.7 kV and lower voltages, there is no MOSFET supplier at 3.3 kV.…”

Section: Application Of Sic Devices In Hybrid Module Technologymentioning

confidence: 99%

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Sharma¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Traction inverter that applies compact 3.3 kV / 1200 A SiC hybrid module

Cited by 32 publications

References 4 publications

Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

± 180° Discontinuous PWM for Single-Phase PWM Converter of High-Speed Railway Propulsion System

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

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