2018
DOI: 10.1541/ieejjia.7.218
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Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

Abstract: This paper presents a high-speed, low loss, and low noise gate driver for silicon-carbide (SiC) MOSFETs. We propose a gate boost circuit to reduce the switching loss and delay time without increasing the switching noise. The proposed gate driver enables converter-level efficiency improvements or power density enhancements. SiC MOSFETs have attracted significant interest as the next generation power devices. In general, the switching performance of power devices exhibits a trade-off between switching loss and n… Show more

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Cited by 37 publications
(10 citation statements)
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“…There is much experience on the deterioration of the MOS gate by the high voltage. The gate voltage control for optimizing the tradeoff between the switching loss and the electronic and magnetic noise is another technical challenges . With the solution of these essential technical challenges for the application of SiC MOSFET, their applications to railway vehicles are expected to improve.…”
Section: Power Electronics Solutions For Rolling Stockmentioning
confidence: 99%
See 1 more Smart Citation
“…There is much experience on the deterioration of the MOS gate by the high voltage. The gate voltage control for optimizing the tradeoff between the switching loss and the electronic and magnetic noise is another technical challenges . With the solution of these essential technical challenges for the application of SiC MOSFET, their applications to railway vehicles are expected to improve.…”
Section: Power Electronics Solutions For Rolling Stockmentioning
confidence: 99%
“…From the view point of the shorter switching durations, less parasitic inductance is preferable to avoid the overvoltage due to the higher current change ratio. On the other hand, because of the current depress effect in the short-circuit failure mode of the semiconductor devices, the The gate voltage control for optimizing the tradeoff between the switching loss and the electronic and magnetic noise is another technical challenges [32]. With the solution of these essential technical challenges for the application of SiC MOSFET, their applications to railway vehicles are expected to improve.…”
Section: Technical Challenge For Sic Mosfet Application For Railway Vmentioning
confidence: 99%
“…However, this technique cannot mitigate negative voltage spikes [27]. The soft gate technique and active driver-controlled circuit are presented in Reference [28]. A novel technique for the driver gate controller to suppress the negative voltage spikes is introduced in Reference [29].…”
Section: Introductionmentioning
confidence: 99%
“…Such devices make the circuit possible to operate at a higher switching frequency compared with the use of conventional devices. This allows an increase of power density, by reducing the size of the passive elements [1], [2].…”
Section: Introductionmentioning
confidence: 99%