Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Sharma, Yogesh

doi:10.5772/intechopen.79487

Cited by 2 publications

(2 citation statements)

References 49 publications

(50 reference statements)

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“…ILICON CARBIDE (SiC) is a very promising material due to its wide bandgap (WBG) properties and has the potential to replace Silicon (Si) in various power electronic applications [1], [2]. The 3C-SiC is the only cubic polytype of Silicon Carbide, also found in literature as β-SiC [3].…”

Section: Introductionmentioning

confidence: 99%

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos

Antoniou

Jennings

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on Silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer of excessive sub-threshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward Current-Voltage (I-V) characteristics in these devices carry considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized Platinum/3C-SiCon-Si Schottky Barrier Diode with scope to shed light in the physical carrier transport mechanisms, the impact of traps and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Further, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier Height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.

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Section: Introductionmentioning

confidence: 99%

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

Arvanitopoulos

Antoniou

Jennings

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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“…Wide bandgap (WBG) semiconductors and Silicon Carbide (SiC) in particular, feature advanced electrical characteristics compared to silicon (Si), which means they can induce a step improvement in electrical power conversion [1] [2].…”

Section: Introductionmentioning

confidence: 99%

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Arvanitopoulos

Antoniou

Perkins

et al. 2019

IEEE Trans. on Ind. Applicat.

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Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C-and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.

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Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Cited by 2 publications

References 49 publications

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

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