Track creation in SiO2 and BaFe12O19 by swift heavy ions: a thermal spike description

Toulemonde, M.; Costantini, Jean‐Marc; Dufour, C.; Meftah, A.; Paumier, E.; Studer, F.

doi:10.1016/0168-583x(96)00007-9

Cited by 211 publications

(103 citation statements)

References 24 publications

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“…The carbon bonds and OH bands appeared in the FTIR spectra are due to CO 2 and moisture absorbed from the atmosphere [34]. The ligands such as OH-, COO-and CO 3 2 À are not came from the raw materials used in synthesis and are not observed from the XRD, EDAX techniques. But they are found only in FTIR spectra.…”

Section: Resultsmentioning

confidence: 99%

“…When an energetic ion penetrates a target, it deposits energy mainly by elastic collision with the nuclei known as nuclear energy loss (S n ), which dominates at lower energy ( $ 10 KeV/amu) and inelastic collisions with the electrons of the target known as electronic energy loss (S e ), which dominates at higher energy region (Z 1 MeV/amu) [1,2]. SHI irradiation induces defects, defect cluster and large number of electron excitation and ionization in target [3][4][5]. Yttrium oxide (Y 2 O 3 ) is found to be one of the best hosts for rare earth (RE) ions because of its similarities in the chemical properties and ionic radius.…”

Section: Introductionmentioning

confidence: 99%

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Ion beam induced luminescence studies of sol gel derived Y2O3:Dy3+ nanophosphors

Shivaramu

Nagabhushana

Lakshminarasappa

et al. 2016

Journal of Luminescence

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a b s t r a c tPure and Dy 3 þ doped Y 2 O 3 are prepared by sol-gel technique. The samples are annealed at 900°C to obtain crystalline phase. X-ray diffraction (XRD) patterns confirm cubic phase of Y 2 O 3 . The crystallites size is calculated using Scherrer formula and is found to be in the order of 29.67 nm. The particles are found to be spherical in nature and their sizes are estimated to be 35 nm by scanning electron microscope (SEM) technique. Online ionoluminescence (IL) spectra of pure and Dy 3 þ doped Y 2 O 3 are recorded with 100 MeV Si 8 þ ions with fluence in the range 0.375-6.75 Â 10 13 ions cm À 2 . Undoped samples do not show IL emission for any of the fluence explored. Four prominent IL emissions with peaks at 488, 670, 767 nm and a prominent pair at 574 and 584 nm are observed in Dy 3 þ doped samples. These characteristic emissions are attributed to luminescence centers activated by Dy 3 þ ions due to 4 F 9/2 -6 H 15/2 , 4 F 9/2 -6 H 11/2, 4 F 9/2 -6 H 9/2 þ 6 H 11/2 and 4 F 9/2 -6 H 13/2 transitions respectively. Further, it is found that IL intensity at 574 nm decays rapidly with ion fluence. A broad and weak photoluminescence (PL) emission with peak at $ 485 nm and a strong emission at 573 nm are observed in ion irradiated Y 2 O 3 :Dy 3 þ . It is found that PL intensity increases with ion fluence up to 3 Â 10 10 ions cm À 2 and then it decreases with further increase of ion fluence. This may be attributed to lattice disorder produced by dense electronic excitation under swift heavy ion irradiation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ion beam induced luminescence studies of sol gel derived Y2O3:Dy3+ nanophosphors

Shivaramu

Nagabhushana

Lakshminarasappa

et al. 2016

Journal of Luminescence

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“…Because SHI show no angular scattering, that is, their trajectory is a straight line and for every point of the ion trajectory, the actual energy deposition Sr; t ð Þ may be calculated using the following formula 41 Sðr; tÞ ¼ bS e GðtÞFðr ? Þ: ð3Þ…”

Section: Discussionmentioning

confidence: 99%

“…The stopping power S e is obtained using the SRIM code, G(t) is a Gaussian with a half-width of 1 fs 41 and Fr ? ð Þ is the spatial electron distribution given by Waligorski et al 42 For each point (x 0 , y 0 , z 0 ) on the ion trajectory, the vectorr ?…”

Section: Discussionmentioning

confidence: 99%

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

et al. 2014

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The controlled creation of defects in silicon carbide represents a major challenge. A wellknown and efficient tool for defect creation in dielectric materials is the irradiation with swift (E kin Z500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved. Here we present experimental evidence that silicon carbide surfaces can be modified by individual swift heavy ions with an energy well below the proposed threshold if the irradiation takes place under oblique angles. Depending on the angle of incidence, these grooves can span several hundreds of nanometres. We show that our experimental data are fully compatible with the assumption that each ion induces the sublimation of silicon atoms along its trajectory, resulting in narrow graphitic grooves in the silicon carbide matrix.

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“…13,[16][17][18][19][20] It is found that the track temperature T͑r , t͒ ͑r is the radial coordinate measured from the center of the track͒ can rise up to several thousand K. In this article we will not take into account these "exact" temperature profiles, but assume that the time-dependent temperature in a cylinder around the ion track ͑r ഛ a͒ is uniform ͑i.e., independent of r͒. The radius of the cylinder, a, is determined by the socalled flow temperature T*, the temperature at which the material shows fluid-like behavior at time scales of the thermal spike.…”

Section: Formulation Of the Modelmentioning

confidence: 99%

Anisotropic plastic deformation by viscous flow in ion tracks

et al. 2005

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Track creation in SiO2 and BaFe12O19 by swift heavy ions: a thermal spike description

Cited by 211 publications

References 24 publications

Ion beam induced luminescence studies of sol gel derived Y2O3:Dy3+ nanophosphors

Ion beam induced luminescence studies of sol gel derived Y2O3:Dy3+ nanophosphors

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

Anisotropic plastic deformation by viscous flow in ion tracks

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