In the framework of the thermal-spike model the present paper deals with the effect of the electronic stopping power (Se) in metals irradiated by swift heavy ions. Using the strength of the electron-phonon coupling g(z) with the number of valence electrons z as the unique free parameter, the increment of lattice temperature induced by swift-heavy-ion irradiation is calculated. Choosing z=2, the calculated threshold of defect creation by Se for Ti, Zr, Co and Fe is about 11, 27.5, 28 and 41 keV nm-1, in good agreement with experiment. Taking the same z value, the calculation shows that Al, Cu, Nb and Ag are Se insensitive. Moreover, in Fe, the differences in the damage created by U ions of different energies but exhibiting the same value of Se may be interpreted by a velocity effect. Using z=2, other calculations suggest that Be (Se>or=11 keV nm-1), Ga (Se>or=5 keV nm-1) and Ni (Se>or=49 keV nm-1) should be sensitive to Se but Mg should not. These examples put the stress on the effect of the physical parameters governing the electron-phonon coupling constant apart from z determination: the sound velocity linked to the Debye temperature and the lattice thermal conductivity. Furthermore, a simple criterion is proposed in order to predict the Se sensitivity of metals.
We report on the observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements. Tracks were generated by high energy ion irradiation with Au and Xe between 27 MeV and 1.43 GeV. In agreement with molecular dynamics simulations, the tracks consist of a core characterized by a significant density deficit compared to unirradiated material, surrounded by a high density shell. The structure is consistent with a frozen-in pressure wave originating from the center of the ion track as a result of a thermal spike.
Upon impact on a solid surface, the potential energy stored in slow highly charged ions is primarily deposited into the electronic system of the target. By decelerating the projectile ions to kinetic energies as low as 150 x q eV, we find first unambiguous experimental evidence that potential energy alone is sufficient to cause permanent nanosized hillocks on the (111) surface of a CaF(2) single crystal. Our investigations reveal a surprisingly sharp and well-defined threshold of potential energy for hillock formation which can be linked to a solid-liquid phase transition.
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