Experimental determination of track cross-section in Gd3Ga5O12 and comparison to the inelastic thermal spike model applied to several materials

Meftah, A.; Costantini, Jean‐Marc; Khalfaoui, N.; Boudjadar, S.; Stoquert, J.P.; Studer, F.; Toulemonde, M.

doi:10.1016/j.nimb.2005.02.025

Cited by 166 publications

(144 citation statements)

References 97 publications

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“…In one set of experiments, 197 Au ions with energies from 1 to 2200 MeV were used. A second group of samples was irradiated by ions of different atomic numbers ͑ 197 Au, 130 Te, 75 As, 32 S, and 19 F͒, but with the same specific energy ͑0.1 MeV/u͒ and hence velocity.…”

Section: Methodsmentioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

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Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity (0.1 MeV/u A197u, T130e, A75s, S32, and F19). Subsequent chemical etching produced conical holes in the films with apertures from a few tens to ∼150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Seth∼2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se>4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy (or electronic stopping force) can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Seth if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm.

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Section: Methodsmentioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

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“…A number of previous experiments [23][24][25] have shown that an amorphous ͑latent͒ track is generated for each single ion impact in a virgin ͑nonirradiated͒ sample whenever the electronic stopping power S e exceeds an intrinsic threshold value S th . Figure 1͑a͒ schematically illustrates the morphology of the created track, which includes a central amorphous core and a surrounding defective halo containing point and extended defects.…”

Section: A Single Impact Experiments "Low Fluences…: Thresholdingmentioning

confidence: 99%

“…3, we have plotted a detailed set of data on the dependence D I 2 vs S e , which were taken from Ref. 25, together with our own data. An extrapolation of these data to zero radius yields a threshold value of around 6 keV/nm for latent track formation in LiNbO 3 .…”

Section: A Single Impact Experiments "Low Fluences…: Thresholdingmentioning

confidence: 99%

“…A number of proposals and strategies have been advanced to understand the damage effects of ion irradiation, namely, thermal spike models 15,25 followed by melting and/or ablation, exciton models, 38,39 and molecular dynamics calculations. 40,41 For femtosecond-laser pulse irradiation, a variety of models have also been invoked.…”

Section: Physical Mechanismsmentioning

confidence: 99%

“…Therefore, the purpose of this work is to present experimental observations of a number of relevant phenomenological features and explore whether a correlation between laser and ion damage can be reasonably established. We will specifically focus on a relevant photonic material, 18 LiNbO 3 ͑having a gap of around 4 eV͒, where some systematic information on the effect of femtosecond laser [19][20][21][22] and swift-ion irradiation [7][8][9][10][11][12][13][23][24][25] ready available. To the best of our knowledge, only a few systematic comparisons have so far been reported.…”

Section: Introductionmentioning

confidence: 99%

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Femtosecond laser and swift-ion damage in lithium niobate: A comparative analysis

García-Navarro

Agulló‐López

Olivares

et al. 2008

Journal of Applied Physics

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A first principles study of the lattice stability of diamond-structure semiconductors under intense laser irradiation J. Appl. Phys. 113, 023301 (2013) High-order sideband generation in bulk GaAs Appl. Phys. Lett. 102, 012104 (2013) Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films J. Appl. Phys. 112, 113917 (2012) Time-domain sampling of x-ray pulses using an ultrafast sample response Appl. Phys. Lett. 101, 243106 (2012) The effects of vacuum ultraviolet radiation on low-k dielectric films App. Phys. Rev. 2012Rev. , 12 (2012 Additional information on J. Appl. Phys. Relevant damage features associated with femtosecond pulse laser and swift-ion irradiations on LiNbO 3 crystals are comparatively discussed. Experiments described in this paper include irradiations with repetitive femtosecond-laser pulses ͑800 nm, 130 fs͒ and irradiation with O, F, Si, and Cl ions at energies in the range of 0.2-1 MeV/amu where electronic stopping power is dominant. Data are semiquantitatively discussed by using a two-step phenomenological scheme. The first step corresponds to massive electronic excitation either by photons ͑primarily three-photon absorption͒ or ions ͑via ion-electron collisions͒ leading to a dense electron-hole plasma. The second step involves the relaxation of the stored excitation energy causing bond breaking and defect generation. It is described at a phenomenological level within a unified thermal spike scheme previously developed to account for damage by swift ions. A key common feature for the two irradiation sources is a well-defined intrinsic threshold in the deposited energy density U th required to initiate observable damage in a pristine crystal: U th Ϸ 1.3ϫ 10 4 −2ϫ 10 4 J / cm 3 for amorphization in the case of ions and U th Ϸ 7 ϫ 10 4 J / cm 3 for ablation in the case of laser pulses. The morphology of the heavily damaged regions ͑ion-induced tracks and laser-induced craters͒ generated above threshold and its evolution with the deposited energy are also comparatively discussed. The data show that damage in both types of experiments is cumulative and increases on successive irradiations. As a consequence, a certain incubation energy density has to be delivered either by the ions or laser photons in order to start observable damage under subthreshold conditions. The parallelism between the effects of laser pulses and ion impacts is well appreciated when they are described in terms of the ratio between the deposited energy density and the corresponding threshold value.

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Structural Damage and Recrystallization Response of Garnet Crystals to Intense Electronic Excitation

Han

Zarkadoula

Crespillo

et al. 2022

Adv Funct Materials

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The susceptibility to irradiation-induced damage, the fundamental mechanism of the relaxation kinetics, and the corresponding recrystallization effect related to the cation radius ratio are comprehensively investigated for Y 3 Al 5 O 12 and Gd 3 Ga 5 O 12 garnet crystals under 645 MeV Xe 35+ irradiation with different fluences of 5 × 10 11 -3 × 10 12 ions cm −2 . Regarding different lattice distortion and swelling levels, the observed microstructure transformations to disordered and amorphous phases, and corresponding hillock dimensions, consistently confirm that Gd 3 Ga 5 O 12 has a higher susceptibility to radiation damage than Y 3 Al 5 O 12 . Combined with iTS model calculations, although Y 3 Al 5 O 12 has higher atomic temperature and energy deposition than Gd 3 Ga 5 O 12 under the same ion velocity and electronic energy loss, the relatively high thermal conductivity and specific heat coefficient of Y 3 Al 5 O 12 crystals enhance the conduction and dissipation of deposition energy, and Gd 3 Ga 5 O 12 , with a higher cation-radius-ratio (r A /r B ), is more easily damaged to amorphous phase due to the less favorable kinetics of ordering and recovery of a melted track region to the crystalline phase. Additionally, the significant bandgap modification in spectral ranges of 5.88-6.75 eV for Y 3 Al 5 O 12 and 4.83-5.41 eV for Gd 3 Ga 5 O 12 , and the enhancement of defect-assisted-related luminescence are achieved, providing a basis to design novel optoelectronic devices in microelectronics fields.

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Experimental determination of track cross-section in Gd3Ga5O12 and comparison to the inelastic thermal spike model applied to several materials

Cited by 166 publications

References 97 publications

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Femtosecond laser and swift-ion damage in lithium niobate: A comparative analysis

Structural Damage and Recrystallization Response of Garnet Crystals to Intense Electronic Excitation

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