Swift heavy ions in magnetic insulators: A damage-cross-section velocity effect

Meftah, A.; Brisard, F.; Costantini, Jean‐Marc; Hage‐Ali, M.; Stoquert, J.P.; Studer, F.; Toulemonde, M.

doi:10.1103/physrevb.48.920

Cited by 350 publications

(154 citation statements)

References 33 publications

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“…This is consistent with the ion 'velocity effect,' in which reduction of the energy and mass of impinging particles can lead to enhanced damage efficiency within smaller ion tracks, due to more compact energy deposition volumes. For example, Meftah et al 28 have shown that mean in-track energy densities produced by 185 MeV Xe ions in Y 3 Fe 5 O 12 are more than double of those produced by 2.5 GeV Pb ions, a trend similar to that seen here. As the magnitude of the structural damage quenched into ion tracks in ThO 2 depends on the amount of energy available to displace atoms and produce defects, the decreased spatial extent of energy deposition by the Xe ions, as compared with Au, results in enhanced damage production within smaller ion tracks.…”

Section: Resultssupporting

confidence: 83%

Redox response of actinide materials to highly ionizing radiation

et al. 2015

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Energetic radiation can cause dramatic changes in the physical and chemical properties of actinide materials, degrading their performance in fission-based energy systems. As advanced nuclear fuels and wasteforms are developed, fundamental understanding of the processes controlling radiation damage accumulation is necessary. Here we report oxidation state reduction of actinide and analogue elements caused by high-energy, heavy ion irradiation and demonstrate coupling of this redox behaviour with structural modifications. ThO 2 , in which thorium is stable only in a tetravalent state, exhibits damage accumulation processes distinct from those of multivalent cation compounds CeO 2 (Ce 3 þ and Ce 4 þ ) and UO 3 (U 4 þ , U 5 þ and U 6 þ ). The radiation tolerance of these materials depends on the efficiency of this redox reaction, such that damage can be inhibited by altering grain size and cation valence variability. Thus, the redox behaviour of actinide materials is important for the design of nuclear fuels and the prediction of their performance.

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Section: Resultssupporting

confidence: 83%

Redox response of actinide materials to highly ionizing radiation

et al. 2015

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“…The maximum size of the etchable track occurs below the stopping power maximum, this being a characteristic found in many different phenomena related to ion-solid interactions because of the so-called velocity effect. [28][29][30][31] For high velocities, despite the further increase in S e , there is an effective decrease in the energy density deposited initially in the tracks due to the higher energy of emitted secondary electrons. For the Au data, this effect is evident for velocities larger than 0.45 MeV/ u ͑ϳ90 MeV͒.…”

Section: A Thresholdsmentioning

confidence: 99%

“…However, as mentioned previously, because of the importance of the spatial distribution of the deposited energy, such thresholds are not unique, but vary with the ion velocity. 31 Here we employ the inelastic thermal spike ͑i-TS͒ model to calculate the conditions ͑critical energy density etch deposited in a specific cylinder͒ needed to produce an etchable damage structure. The i-TS model is the only model available to describe quantitatively the threshold of damage creation and the track size in insulators, taking into account the incident ion velocity.…”

Section: Criterion For Etchability and The Inelastic Thermal Spikementioning

confidence: 99%

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Dallanora

Marcondes

Bermúdez

et al. 2008

Journal of Applied Physics

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Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity (0.1 MeV/u A197u, T130e, A75s, S32, and F19). Subsequent chemical etching produced conical holes in the films with apertures from a few tens to ∼150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Seth∼2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se>4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy (or electronic stopping force) can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy for melting. The model correctly predicts the threshold for the appearance of track etching Seth if the radius of the molten region has at least 1.6 nm. Homogeneous etching comes out only for latent track radii larger than 3 nm.

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“…For MeV ion-solid interactions, it is well known ͑from, e.g., biomolecular damage, electronic sputtering and latent track investigations͒ that the ion stopping power in the solid does not alone characterize the energy density deposited in the targets. [11][12][13][14] Part of the energy deposited by the primary ions is transported far away from the path of the ion by means of secondary electrons produced as a result of the primary ionizations. A detailed description of ion tracks involves the knowledge of double differential cross sections for the emission angle and energy of the secondary electrons and electron interaction cross sections for the target atoms and molecules, which are generally not known.…”

Section: Introductionmentioning

confidence: 99%

Chemical damage in poly(phenylene sulphide) from fast ions: Dependence on the primary-ion stopping power

et al. 1996

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Thin poly͑phenylene sulphide͒ foils were bombarded with fast atomic ions ͑ 4 He, 12 C, 16 O, 32 S, 79 Br, 127 I͒ in the energy range between 2.5 to 78 MeV. In order to maintain the same ion track size for all impacting ions, their initial velocity was kept constant at 1.1 cm/ns. Under these conditions the deposited energy density in a single ion track changes as a result of the varying stopping power (dE/dx) of the projectiles in the material. Fourier transform infrared spectroscopy and UV-visible spectroscopy were used to characterize the irradiated targets. Damage cross sections ͑ ͒ for different chemical bonds, such as C-S and ring C-C bonds, are extracted from the IR data. For all analyzed IR bands, the values of scale roughly with the square of dE/dx ͑energy density in a single ion track͒. The absorption of the irradiated samples in the visible and UV region increases as a function of fluence. The rate of increase of absorption at a particular wavelength scales also as (dE/dx) n with nϷ2. The observed nonlinear dependence of the damage cross sections on the deposited energy density is considered in the light of two models: a statistical model based on the fluctuations of the energy deposited by the primary ions ͑hit theory͒ and an activation ͑thermal spike͒ model. It is found that the damage cross section is not determined directly by the initial deposited energy density distribution. The best agreement between experiment and theory is obtained when transport of the deposited energy occurs.

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Swift heavy ions in magnetic insulators: A damage-cross-section velocity effect

Cited by 350 publications

References 33 publications

Redox response of actinide materials to highly ionizing radiation

Redox response of actinide materials to highly ionizing radiation

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Chemical damage in poly(phenylene sulphide) from fast ions: Dependence on the primary-ion stopping power

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