Fine Structure in Swift Heavy Ion Tracks in Amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

Kluth, Patrick; Schnohr, Claudia; Pakarinen, Olli H.; Djurabekova, Flyura; Sprouster, David; Giulian, Raquel; Ridgway, Mark C; Byrne, Aidan; Trautmann, C.; Cookson, David J.; Nordlund, K.; Toulemonde, M.

doi:10.1103/physrevlett.101.175503

Cited by 250 publications

(278 citation statements)

References 35 publications

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“…An accurate extrapolation to a threshold of S e for ion track formation in a-Si requires a larger data set given the nonlinear relationship between ion track radii and electronic energy deposition demonstrated in other materials, e.g., a-SiO 2 . 12 Nonetheless, the value of 10.6 keV/nm represents an upper limit for the threshold of S e and is less than that reported for ion hammering and plastic deformation. 3 This suggests ion track formation may not be the only process operative during ion hammering.…”

Section: A As-implanted A-simentioning

confidence: 61%

“…Similar to our previous studies 12 , a narrow Gaussian distribution of the radius (with a standard deviation of <10%) was used to account for slight variations of the ion track radius and any deviation from the parallel alignment of the ion tracks. When averaged over different samples irradiated under the same conditions and measured in separate experiments, ion tracks in as-implanted a-Si show an overall radius of 7.9 ± 0.4 nm composed of a 2.5 ± 0.1 nm core radius and 5.4 ± 0.3 nm shell thickness (see Table I).…”

Section: A As-implanted A-simentioning

confidence: 99%

“…We have recently identified and characterized ion tracks in amorphous metals, 10 silica (a-SiO 2 ), 11,12 and Ge (a-Ge) 13 by utilizing synchrotron-based small-angle x-ray scattering (SAXS). In the present study we provide direct and definitive experimental evidence for ion tracks in a-Si by combining SAXS with molecular dynamics (MD) simulations.…”

Section: Introductionmentioning

confidence: 99%

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Latent ion tracks in amorphous silicon

et al. 2013

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We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

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Section: A As-implanted A-simentioning

confidence: 61%

Section: A As-implanted A-simentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Latent ion tracks in amorphous silicon

et al. 2013

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“…For example, transmission electron microscopy (TEM) identification of amorphous ion tracks in an amorphous matrix is impeded by the lack of diffraction and absorption contrast. In contrast, small-angle x-ray scattering (SAXS) is an effective means of characterizing ion tracks under such conditions, as we have demonstrated for amorphous SiO 2 [12]. For this report, we now combine physical characterization using SAXS and TEM with a multi-time-scale theoretical approach including an asymptotical trajectory Monte Carlo (MC) calculation of the electron dynamics, a two-temperature model (TTM) description of the heat dissipation and a MD simulation of the atom dynamics for ion tracks in a-Ge.…”

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confidence: 94%

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. DOI: 10.1103/PhysRevLett.110.245502 PACS numbers: 61.80.Jh, 61.43.Dq, 61.43.Bn, 61.05.cf Swift heavy-ion irradiation (SHII) has many applications, spanning geochronological dating [1] to nanostructure fabrication [2]. Though this approach has found industrial application [3], the fundamental nature of ionsolid interactions at very high ion energies remains poorly understood. Such interactions are dominated by inelastic processes (electronic stopping) resulting in the excitation and ionization of substrate atoms while, in contrast, the elastic processes (nuclear stopping) that lead to ballistic atomic displacements at much lower energies are negligible in the SHII regime. The efficiency with which energy deposited in the electronic subsystem is subsequently transferred to the lattice is governed by the electronphonon coupling parameter g where typically g amorphous > g crystalline due to a reduced electron mean free path in the former. When the lattice temperature exceeds that required for melting, a narrow cylinder of molten material is formed along the ion path. The ensuing rapid resolidification of this transient liquid phase can yield remnant structural modifications within the substrate in the form of an ion track.Crystalline Ge (c-Ge) is relatively insensitive to SHII such that ion-track production necessitates very high electronic stopping S e values. Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al. [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten i...

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“…We consider that these models appear better suited to account for the structure and morphology of the damage tracks consisting of an amorphous core surrounded by a halo of point (and maybe extended) defects. Unfortunately, direct experimental evidence for the occurrence and structure of the halo is scarce [22][23][24][25] due to the lack of enough structural sensitivity of TEM, and RBS/C but there have been some new developments; for instance, SAXS has been recently used to study the morphology of the tracks in silica [26]. Anyhow, the amorphization kinetics offers a relevant method to monitor the evolution and structure of ion-beam damage as illustrated in this paper.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of amorphization induced by swift heavy ions in α-quartz

Peña‐Rodríguez

Manzano-Santamaría

Rivera

et al. 2012

Journal of Nuclear Materials

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The kinetics of amorphization in crystalline Si0 2 (oi-quartz) under irradiation with swift heavy ions (0 +1 at 4 MeV, 0 +4 at 13 MeV, F +2 at 5 MeV, F +4 at 15 MeV, Cl +3 at 10 MeV, CI* 4 at 20 MeV, Br +5 at 15 and 25 MeV and Br +8 at 40 MeV) has been analyzed in this work with an Avrami-type law and also with a recently developed cumulative approach (track-overlap model). This latter model assumes a track morphology consisting of an amorphous core (area

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Fine Structure in Swift Heavy Ion Tracks in AmorphousSiO2

Cited by 250 publications

References 35 publications

Latent ion tracks in amorphous silicon

Latent ion tracks in amorphous silicon

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

Kinetics of amorphization induced by swift heavy ions in α-quartz

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