Latent ion tracks in amorphous silicon

Bierschenk, Thomas; Giulian, Raquel; Afra, Boshra; Rodríguez, Matías; Schauries, Daniel; Mudie, Stephen; Pakarinen, Olli H.; Djurabekova, Flyura; Nordlund, K.; Osmani, O.; Medvedev, Nikita; Rethfeld, B.; Ridgway, Mark C; Kluth, Patrick

doi:10.1103/physrevb.88.174111

Cited by 35 publications

(35 citation statements)

References 31 publications

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“…These different track signatures may be observable in future small angle Xray scattering (SAXS) experiments on crystalline silicon. Previous SAXS experiments, and the corresponding MD simulations, that have characterised the damage resulting from SHI irradiation of amorphous Si [7] show an overdense core similar to our low Figure 6 shows how the electronic specific heat leads to significantly different final defect distributions and track radii. At 5 keV/nm we predict the formation of an ion track with a radius of 16.9Å using the specific heat determined by the free electron gas model.…”

Section: Resultsmentioning

confidence: 59%

“…As the energy is dissipated, defect recombination and recrystallisation occur, however, in certain materials a highly disordered region, called an ion track, can remain along the path of the SHI. Ion tracks have been experimentally observed in insulators [1,2,3,4], semiconductors [5,6,7], and metals [8,9].…”

Section: Introductionmentioning

confidence: 99%

“…In the two temperature model the electrons and lattice are described by two separate, but interacting, subsystems. This model has been widely used to simulate SHI irradiation in metals [19], semiconductors [20,7,21], and insulators [3,4,22].…”

Section: Introductionmentioning

confidence: 99%

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The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon

Khara

Murphy

Daraszewicz

et al. 2016

J. Phys.: Condens. Matter

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Abstract. Swift heavy ion (SHI) irradiation of materials is often modelled using the two-temperature model. While the model has been successful in describing SHI damage in metals, it fails to account for the presence of a bandgap in semiconductors and insulators. Here we explore the potential to overcome this limitation by explicitly incorporating the influence of the bandgap in the parameterisation of the electronic specific heat for Si. The specific heat as a function of electronic temperature is calculated using finite temperature density functional theory with three different exchange correlation functionals, each with a characteristic bandgap. These electronic temperature dependent specific heats are employed with two temperature molecular dynamics to model ion track creation in Si. The results obtained using a specific heat derived from density functional theory showed dramatically reduced defect creation compared to models that used the free electron gas specific heat. As a consequence, the track radii are smaller and in much better agreement with experimental observations. We also observe a correlation between the width of the band gap and the track radius, arising due to the variation in the temperature dependence of the electronic specific heat.

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Section: Resultsmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

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The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon

Khara

Murphy

Daraszewicz

et al. 2016

J. Phys.: Condens. Matter

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“…The core-shell track structure was pivotal in explaining a process by which metallic nanoparticles are elongated by swift heavy ion irradiation [51]. In amorphous Si and Ge, where ion tracks were inferred from macroscopic plastic deformation observed after high fluence swift heavy ion irradiation, SAXS measurements provided clear evidence for their existence and also revealed core shell track structures [4,58]. In Ge, single ion tracks additionally consist of bow tie shaped voids [4], which form the precursors for the observed porosity at higher irradiation fluences.…”

Section: Small-angle X-ray Scatteringmentioning

confidence: 98%

Advanced techniques for characterization of ion beam modified materials

Zhang

Debelle

Boulle

et al. 2015

Current Opinion in Solid State and Materials Science

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Keywords:Rutherford backscattering spectrometry Raman spectroscopy X-ray diffraction Small-angle X-ray scattering Positron annihilation spectroscopy Ion beam modification a b s t r a c t Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiation effects in modified depths ranging from a few nm to a few tens of lm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.

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“…This results into a need for adjusting the input of the energy to the lattice by artificially changing parameters of the electron-phonon coupling to heat the lattice more significantly in the center before the electrons run away (see applications of the 'thermal-spike' model [60]). It might also be one of the reasons why rescaling of input data from TTM for MD simulations is often used [87,88], additionally to the specifics of the interatomic potentials, and the fact that softening of the potentials due to nonthermal effects is usually missing in classical-MD simulations. All of these effects and their relative importance warrant further dedicated research.…”

Section: Examples: Atomic Dynamics After An Shi Impactmentioning

confidence: 99%

Electronic and atomic kinetics in solids irradiated with free-electron lasers or swift-heavy ions

Medvedev

Волков

Ziaja

2015

Nuclear Instruments and Methods in Physics Research Section B:

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In this brief review we discuss the transient processes in solids under irradiation with femtosecond X-ray free-electron-laser (FEL) pulses and swift-heavy ions (SHI). Both kinds of irradiation produce highly excited electrons in a target on extremely short timescales. Transfer of the excess electronic energy into the lattice may lead to observable target modifications such as phase transitions and damage formation. Transient kinetics of material excitation and relaxation under FEL or SHI irradiation are comparatively discussed. The same origin for the electronic and atomic relaxation in both cases is demonstrated. Differences in these kinetics introduced by the geometrical effects (μm-size of a laser spot vs nm-size of an ion track) and initial irradiation (photoabsorption vs an ion impact) are analyzed. The basic mechanisms of electron transport and electron-lattice coupling are addressed. Appropriate models and their limitations are presented.Possibilities of thermal and nonthermal melting of materials under FEL and SHI irradiation are discussed.

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Latent ion tracks in amorphous silicon

Cited by 35 publications

References 31 publications

The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon

The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon

Advanced techniques for characterization of ion beam modified materials

Electronic and atomic kinetics in solids irradiated with free-electron lasers or swift-heavy ions

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