A coupled two-temperature, molecular dynamics methodology is used to simulate the structural evolution of bcc metals (Fe and W) and fcc metals (Cu and Ni) following irradiation by swift heavy ions. Electronic temperature dependent electronic specific heat capacities and electron-phonon coupling strengths are used to capture the full effects of the variation in the electronic density of states. Tungsten is found to be significantly more resistant to damage than iron, due both to the higher melting temperature and the higher thermal conductivity. Very interesting defect structures, quite different from defects formed in cascades, are found to be created by swift heavy ion irradiation in the bcc metals. Isolated vacancies form a halo around elongated interstitial dislocation loops that are oriented along the ion path. Such configurations are formed by rapid recrystallization of the molten cylindrical region that is created by the energetic ion. Vacancies are created at the recrystallization front, resulting in excess atoms at the core which form interstitial dislocation loops on completion of crystallization. These unique defect structures could, potentially, be used to create metal films with superior mechanical properties and interesting nanostructures.
Abstract. Swift heavy ion (SHI) irradiation of materials is often modelled using the two-temperature model. While the model has been successful in describing SHI damage in metals, it fails to account for the presence of a bandgap in semiconductors and insulators. Here we explore the potential to overcome this limitation by explicitly incorporating the influence of the bandgap in the parameterisation of the electronic specific heat for Si. The specific heat as a function of electronic temperature is calculated using finite temperature density functional theory with three different exchange correlation functionals, each with a characteristic bandgap. These electronic temperature dependent specific heats are employed with two temperature molecular dynamics to model ion track creation in Si. The results obtained using a specific heat derived from density functional theory showed dramatically reduced defect creation compared to models that used the free electron gas specific heat. As a consequence, the track radii are smaller and in much better agreement with experimental observations. We also observe a correlation between the width of the band gap and the track radius, arising due to the variation in the temperature dependence of the electronic specific heat.
Including the effects of excited electrons in classical simulations, at the level of the two-temperature model, involves the coupling of a grid-based finite-difference solver for a heat diffusion equation and classical molecular dynamics simulations with an inhomogeneous thermostat. Simulation of large systems requires domain decomposition of both particle-based and grid-based techniques. Starting with the CCP5 flagship code dl poly 4 as the domain-decomposed molecular dynamics code, we devised a method to divide up temperature grids among processor cores in a similar fashion, including the appropriate communications between cores to deal with boundaries between grid divisions. This article gives the outline of how the domain decomposition of the temperature grids was achieved, as well as some example applications of the two-temperature model implementation in dl poly 4.
The atomic response of the topmost graphene layer on graphite was studied by using scanning tunneling microscopy (STM) as a function of tunneling gap distance, gap voltage and bias polarity. The contrast of the site-dependent topographical image depends on the gap distance, and the site-dependent tunneling current order of magnitude at a given gap distance is switched with the gap voltage (i.e. the contrast is significantly altered). The site-dependent current order is altered at the lower positive gap voltage as the gap distance is reduced between the probe and the carbon atoms of the topmost graphene layer. The switching in the atomic image contrast and the current order of magnitude is directly related to the differential atomic response of carbon atoms to the STM probe originating from the electronically active and mechanically soft β-carbon atoms.
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