2005
DOI: 10.1103/physrevb.71.024103
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Anisotropic plastic deformation by viscous flow in ion tracks

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Cited by 62 publications
(82 citation statements)
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“…We propose that ion irradiation generates biaxial compressive stress in silicon nitride, as it is known to do in other amorphous materials at higher ion energies. 2,3,[9][10][11][12][13][14][15][16][17][18] An analysis of the resulting mechanics provides good agreement with experimentally measured deflection profiles, as well as an explanation for the qualitatively different shapes observed in low-stress and high-stress silicon nitrides.…”
Section: Introductionmentioning
confidence: 57%
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“…We propose that ion irradiation generates biaxial compressive stress in silicon nitride, as it is known to do in other amorphous materials at higher ion energies. 2,3,[9][10][11][12][13][14][15][16][17][18] An analysis of the resulting mechanics provides good agreement with experimentally measured deflection profiles, as well as an explanation for the qualitatively different shapes observed in low-stress and high-stress silicon nitrides.…”
Section: Introductionmentioning
confidence: 57%
“…Differences in the interaction with ion beams for different types of silica have been observed as well, 2 and have been conjectured to be the manifestation of different flow temperatures in the different silicas. 15 A similar explanation for silicon nitride is tenable.…”
Section: ͑14͒mentioning
confidence: 97%
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“…Macroscopically, amorphous SiO 2 (a-SiO 2 ) undergoes a volume-conserving anisotropic deformation when subjected to SHII such that thin freestanding layers contract and expand, respectively, in directions parallel and perpendicular to that of the incident ion [1]. The viscoelastic model [2,3], based on a transient thermal effect, successfully explains this so-called ion hammering. Microscopically, energy is deposited along the ion path, from incident ion to matrix electrons, and is then dissipated within a narrow cylinder of material surrounding the ion path.…”
mentioning
confidence: 99%
“…According to the thermal spike model [15,22] the anisotropic deformation per unit of deposited energy density can be represented as @A=@S e / a=qC at the same irradiation fluence, where a is the thermal volume expansion coefficient, q is the mass density and C is the specific heat per unit mass. Thus the deformation of PS is larger than for SiO 2 by almost two orders of magnitude [23].…”
Section: Resultsmentioning
confidence: 99%