Time-resolved spectroscopy of biexciton luminescence inZnxCd1

Yoichi Yamada

¹

,

Tomobumi Mishina

²

,

Yasuaki Masumoto

³

et al.

Observation of exciton and biexciton processes in CdxZn1−xSe/ZnSe (x=0.2)

“…The biexciton binding energy was estimated to be 10 meV from the fit, which agrees well with biexciton binding energies obtained from similar samples. 19,20 In summary, we have observed exciton and biexciton lines in Cd 0.2 Zn 0.8 Se/ZnSe MQW structures in lowtemperature photoluminescence. The assignment of exciton and biexciton transitions was verified by examining their energy positions, intensity dependence on excitation density, relative decay lifetimes, excitation polarization dependence, and spectral line shapes.…”

Identification of extremely radiative nature of AlN by time-resolved photoluminescence

“…12 The effective radiative lifetime ͑ R,eff ͒ for the NBE emission at LT in III-V and II-VI semiconductors [11][12][13][14][15][16][17] are plotted as a function of E g in Fig. Therefore, PL,eff at 7 K can be used as a representative R for the first approximation.…”

Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

“…4 The moderately large exciton binding energy of ZnSe ͑19 meV͒ can lead to observation of biexcitons if the exciton linewidth is less than the biexciton binding energy. Biexcitons have been observed in GaAs based quantum wells ͑QW͒, 5,6 in ZnSe based QW structures, [7][8][9][10][11] in polycrystalline ZnSe 7 and in ZnS epilayers. 12 It has been shown that in ZnSe QW structures the biexciton play an important role in the lasing mechanism at lower temperatures.…”