Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

Hauksson, I.; Kawakami, Yoichi; Fujita, Sg.; Galbraith, I.; Prior, K. A.; Cavenett, B.C.

doi:10.1063/1.366935

Cited by 5 publications

(4 citation statements)

References 20 publications

(21 reference statements)

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“…It has been pointed out that recombination processes of dense excitons in wide-gap semiconductors contribute to the formation of optical gain. [2][3][4][5][6] This situation is more pronounced in low-dimensional structures because of the enhancement in exciton binding and its oscillator strength due to the effect of quantum confinement. [7][8][9][10][11][12] Among wide-gap semiconductors, ZnS has a large exciton binding energy and a small Bohr radius of about 37 meV and 2.4 nm, respectively.…”

Section: Introductionmentioning

confidence: 96%

Optical properties of biexcitons in ZnS

et al. 2000

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Characteristics of biexcitons in ZnS epitaxial layers with biaxial tensile strain have comprehensively been studied by means of photoluminescence excitation spectroscopy, magnetophotoluminescence spectroscopy, and time-resolved photoluminescence spectroscopy. Photoluminescence excitation measurement of biexcitons allowed us to observe two-photon absorption of biexcitons and to determine the biexciton binding energy of 8.0Ϯ1.2 meV. Under a magnetic field, the luminescence line due to the radiative recombination of light-hole free excitons slightly shifted to the lower-energy side ͑about 0.3 meV at 9 T͒. On the other hand, the luminescence line due to the radiative recombination of biexcitons split into two components. This splitting ͑about 1.2 meV at 9 T͒ originated from the Zeeman splitting of light-hole free excitons in the final state of the optical transition for biexciton luminescence. In addition, the luminescence decay times of both light-hole free excitons and biexcitons were estimated to be about 130 and 80 ps, respectively. The observed temporal behavior was consistent with the expected recombination dynamics between excitons and biexcitons.

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Section: Introductionmentioning

confidence: 96%

Optical properties of biexcitons in ZnS

et al. 2000

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“…However, it could be observed only at temperatures up to ∼60 K [8]. This is due to the thermal dissociation of biexcitons at elevated temperatures, which was also demonstrated in visible light-emitting materials such as ZnSe where the biexciton binding energy was 4 meV and its emission could be observed only below 40 K [11].…”

Section: Introductionmentioning

confidence: 88%

“…Thermal dissociation of biexcitons has also been demonstrated in other kinds of semiconductors. For example, biexciton emission could not be observed when the temperature was higher than 40-50 K in ZnSe in which the biexciton binding was about 4 meV [11]. Similarly, in ZnS where the biexciton binding energy was 8 meV, the biexciton emission was not observable when the temperature is higher than 100 K [38].…”

Section: Temperature Dependence Of Biexciton Emission As a Practical ...mentioning

confidence: 98%

Synthesis and optical properties of single crystal ZnO nanorods

Zhang¹,

Bình²,

Wakatsuki³

et al. 2004

Nanotechnology

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ZnO nanorods were epitaxially grown by metalorganic chemical vapour deposition (MOCVD) on sapphire (0001) and substrates. The nanorods were elongated along the ZnO c-axis which was parallel to the substrate normal. Good alignment among the rods was achieved both in the length direction and in the in-plane orientations. The line width of bound exciton emissions was meV at low temperatures. Emissions due to free excitons were observed from low to room temperature. Biexciton emissions were observed up to K. The band edge emission at room temperature was found to be a mixture of emissions due to free excitons and other impurity-related emissions, indicating that care must be taken when assigning the emission peak at higher temperatures.

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“…It should be noted that the 4 keV electron beam can probe the top ϳ0.2 m of the ZnSe layer. Since the ZnSe layer is 2 m thick, and will have a diffusion length on the order of 0.3-0.5 m, 14,15 it is very unlikely that the 1.45 eV CLS peak is caused by band to band recombination in the underlying GaAs. This conclusion is consistent with the preponderance of DLOS data described above, demonstrating that this level likely acts as an efficient generation-recombination center in MBE-grown ZnSe devices.…”

Section: Evidence For a Dominant Midgap Trap In N-znse Grown By Molecmentioning

confidence: 99%

Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy

Hierro

Kwon

Goss

et al. 1999

Applied Physics Letters

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A midgap deep level in n-type ZnSe grown by molecular beam epitaxy (MBE) on In0.04Ga0.96As/GaAs is detected and investigated by deep level optical spectroscopy and cathodoluminescence spectroscopy. The deep level has an optical threshold energy of 1.46 eV below the conduction band edge, and its concentration strongly depends on the Zn:Se beam pressure ratio during initial nucleation of the ZnSe layer. The concentration of this level decreases by a factor of ∼8 for Se rich vs Zn rich nucleation conditions, correlating with a decrease in the Se vacancy concentration for Se-rich nucleation. The investigation of photocapacitance transients revealed a strong interaction of the 1.46 eV level with both the conduction and the valence bands. Moreover, this level showed the largest optical cross section (emission rate of ∼103 s−1) of all of the levels found in the ZnSe layer. Taken together, these observations suggest this level may be an important recombination-generation center in MBE-grown ZnSe devices on GaAs substrates.

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Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

Cited by 5 publications

References 20 publications

Optical properties of biexcitons in ZnS

Optical properties of biexcitons in ZnS

Synthesis and optical properties of single crystal ZnO nanorods

Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy

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